| Allicdata Part #: | MT29F256G08AUCABH3-10:A-ND |
| Manufacturer Part#: |
MT29F256G08AUCABH3-10:A |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 256G PARALLEL 100LBGA |
| More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 10... |
| DataSheet: |  MT29F256G08AUCABH3-10:A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 256Gb (32G x 8) |
| Clock Frequency: | 100MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 100-LBGA |
| Supplier Device Package: | 100-LBGA (12x18) |
| Base Part Number: | MT29F256G08 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory has been used for decades in a plethora of different applications and is one of the most important components of many modern-day systems. The MT29F256G08AUCABH3-10:A, one type of memory that has been developed in recent years, presents an innovative solution to many memory-related problems. With its robust specifications and new features, this memory is a highly suitable and reliable option for many applications. The MT29F256G08AUCABH3-10:A memory is a type of synchronous dynamic random access memory (SDRAM) used in high-end electronics such as computers, digital cameras, gaming devices, and more. It is Non-Volatile meaning it remembers information even when it is not powered, is highly resistant to electricity variations, and offers a wide range of features. It has a maximum clock frequency of 800MHz with an error-correction code (ECC) of up to 101 bits and is available with NAND or NOR flash technologies. The MT29F256G08AUCABH3-10:A memory includes a variety of features that make it an ideal choice for many applications. It comes with an on-die termination (ODT) circuit that reduces signal reflections on memory bus lines. It also has an on-die Sense Amplifier that aids in chip-level isolation and timing measurements. Other features such as Error Correcting Code (ECC), Refresh Window, Data Bus Inversion (DBI), Partial Array Self-Refresh (PASR) and Clock enable/disable make it an attractive option for various applications. The MT29F256G08AUCABH3-10:A memory can be found in a range of applications, including those related to aerospace, automotive, industrial, and consumer electronics. Its widespread use has been attributed to its reliability, resistance to electricity variations, and less power consumption than other memory solutions available today. It has also been used in advanced medical imaging systems such as magnetic resonance imaging (MRI) for data acquisition and processing. The working principle of the MT29F256G08AUCABH3-10:A memory is based on the dynamic random access memory (DRAM) architecture. It employs switches to control the flow of data and stores information using a charging and discharging mechanism. It has an internal array of memory cells, each of which consists of one or more transistors, arranged in an array. They store each bit of data as a binary value. The data is written by turning on an appropriate transistor in the array and read by detecting the charge state of the cell through a Sense Amplifier. In summary, the MT29F256G08AUCABH3-10:A is a highly reliable and commercially available type of memory. With its varied features and robust specifications, it can be found in many applications, ranging from consumer electronics to advanced medical imaging systems. It is a logical choice for engineers looking for an efficient memory solution for their projects.The specific data is subject to PDF, and the above content is for reference
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