MT29F256G08CEEABH6-12:A TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	256Gb (32G x 8)
Clock Frequency:	83MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.5 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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Introduction

Memory is an important component of modern electronic devices. A wide range of memory devices are available on the market today, ranging from Random Access Memory (RAM) to Flash Memory. Among them, the MT29F256G08CEEABH6-12:A TR is a highly reliable Flash memory chip providing fast data read and write performance, low power consumption and excellent endurance. In this article, we will discuss the application field and working principle of MT29F256G08CEEABH6-12:A TR Flash memory chip.

Application Field

The MT29F256G08CEEABH6-12:A TR is a 256Gb Multi-Level Cell (MLC) NAND flash memory chip. It is suitable for use in a wide variety of applications, including embedded multimedia cards, solid-state drives, USB flash drives, digital video recorders and more. Its low power consumption and fast read/write speeds make it ideal for applications where performance and power efficiency are critical. It is also capable of cycling endurance of up to 100,000 program/erase (P/E) cycles, meaning that it can continue to provide reliable data storage even after extensive use.

Working Principle

The MT29F256G08CEEABH6-12:A TR operates on a NAND architecture. In traditional NAND architecture, the data is stored in cells in a hexagonal array. Each cell contains two transistors and a select gate. The cells are arranged in blocks, which are further divided into pages. The cells are connected together through a grid of logic blocks, called NAND strings. When a command is received by the chip, the logic blocks decode the command and initiate the reading or writing process. During the write process, the transistors are charged, representing the data being stored. During the read process, the transistors are discharged and the resulting voltage differential across the cell is used to decode the data.

Conclusion

The MT29F256G08CEEABH6-12:A TR is a high performance, low power Flash memory chip that is suitable for a wide range of applications. It offers fast data read and write performance, low power consumption and excellent endurance, along with a NAND architecture that enables reliable data storage. Thanks to its features, the MT29F256G08CEEABH6-12:A TR is a great choice for many electronic devices.

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