| Allicdata Part #: | MT29F256G08CJABAWP-IT:B-ND |
| Manufacturer Part#: |
MT29F256G08CJABAWP-IT:B |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 256G PARALLEL 48TSOP |
| More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) Parallel |
| DataSheet: | MT29F256G08CJABAWP-IT:B Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 256Gb (32G x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
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Memory is the foundation of working for almost every electronic device. It is responsible for the storage, maintenance and implementation of data and instructions necessary for the efficient functioning of electronic devices. MT29F256G08CJABAWP-IT:B is one of the most popular memory solutions out there, providing high capacity and reliable performance. This article will discuss the application field and working principle of MT29F256G08CJABAWP-IT:B.
MT29F256G08CJABAWP-IT:B is a 3D NAND flash memory component. It is manufactured by Toshiba Memory Corporation and is released under part number TC58NBV5D9FHFA18. This component is used in a wide range of applications and serves as the centerpiece of several embedded devices. The component features a wide range of memory structures, including multi-level cells for increased storage capacity, SLC/MLC for higher reliability, and Toggle DDR for greater performance.
The component has a 512 Megabit capacity, allowing it to store up to 64KB of data per die. The component also has an operating frequency of 108MHz and an interface speed of up to 6.6Gb/s. It has high endurance and reliability, with over 10 years of expected data retention and an endurance rating of 150,000 program/erase cycles. The component is available in a range of package formats, including FBGA, TFBGA and BGA, making it suitable for many different applications.
MT29F256G08CJABAWP-IT:B works by writing data to its NAND flash cells. Each cell consists of two transistors and a dielectric layer that serves as a floating gate. When writing data, a charge is written to the gate, which causes electrons to be trapped in the dielectric layer, in effect trapping the logic state of the cell. To read data, the charge of the gate is read, allowing the cell to be either ‘1’ or ‘0’. This allows for the memory to store binary information.
MT29F256G08CJABAWP-IT:B is used in a variety of applications, including automotive, industrial and digital signage. It is also used in gaming consoles and portable media devices. Its high endurance and reliability make it ideal for embedded and industrial applications. The component is also suitable for automotive applications, due to its wide operating temperature range of 200C to +85C. The component is also used in computing applications, such as server and storage, due to its high throughput and capacity.
In conclusion, MT29F256G08CJABAWP-IT:B is an essential component in many embedded, industrial and computing applications. It provides a combination of high endurance, performance and capacity, making it ideal for memory-intensive applications. Its use in a wide range of applications makes it a popular choice for memory solutions.
The specific data is subject to PDF, and the above content is for reference
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MT29F256G08CJABAWP-IT:B Datasheet/PDF