
Allicdata Part #: | MT29F256G08CKEDBJ5-12:D-ND |
Manufacturer Part#: |
MT29F256G08CKEDBJ5-12:D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256G PARALLEL 83MHZ |
More Detail: | FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 83... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 256Gb (32G x 8) |
Clock Frequency: | 83MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
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MT29F256G08CKEDBJ5-12 is a type of 2D NAND Flash memory with 256GB capacity, developed by Micron.
It features 8K page size and 19nm process technology, which provides high performance and stability. The biggest feature of MT29F256G08CKEDBJ5-12 is its support for command-based multi plane programming. It enables the memory to write up to four pages in one plane and four planes in one operation, giving it a write speed four times faster than traditional methods.
MT29F256G08CKEDBJ5-12 also supports ONFI 3.0 and ONFI 4.1 interfaces, making it compatible with most electronic products. In addition, it has Block Preconditioning and Multi Plane Restore technology to make the memory more efficient and reliable.
Application field
MT29F256G08CKEDBJ5-12 is widely used in mobile phone, digital camera, tablets and other consumer electronics. It is also frequently used in embedded systems and automotive applications due to its high reliability, speed and cost-effectiveness.
Besides that, this 2D NAND Flash memory is also used in industrial applications including industrial control, medical equipment and instrumentation.
Working principle
MT29F256G08CKEDBJ5-12 works in a similar way to other 2D NAND Flash memories. It has two planes with a total of 16 banks. Each plane has four banks, and each bank has 512 pages.
To write to this memory, the memory controller first sends the write data to the column-register in the pertinent bank. Then, the data is programmed into a page in the selected plane.
When the write process is completed, the memory controller verifies the written data by reading it from the row-register in the pertinent bank. If read data matches the written data, the data is considered written successfully.
To read this memory, the data is read from the row-register in the pertinent bank. This data is then written back to the column-register, which is then read and returned to the memory controller.
In addition, MT29F256G08CKEDBJ5-12 also supports error-correction-code (ECC) to ensure read data integrity. ECC is used to identify and correct any errors that occur during the read process.
Overall, MT29F256G08CKEDBJ5-12 is a 2D NAND Flash memory with high performance and reliability, making it suitable for a wide range of consumer and industrial applications. Its support for fast write speeds and its wide compatibility with different electronic devices give it an advantage over other memories.
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