MT29F256G08EBHAFJ4-3RES:A TR Allicdata Electronics
Allicdata Part #:

MT29F256G08EBHAFJ4-3RES:ATR-ND

Manufacturer Part#:

MT29F256G08EBHAFJ4-3RES:A TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256G PARALLEL 333MHZ
More Detail: FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 33...
DataSheet: MT29F256G08EBHAFJ4-3RES:A TR datasheetMT29F256G08EBHAFJ4-3RES:A TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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MT29F256G08EBHAFJ4-3RES:A TR application field and working principle

Memory

The MT29F256G08EBHAFJ4-3RES is a 3D NAND memory device designed for use in a variety of applications, such as consumer electronics, digital cameras and embedded systems. This device combines the proven reliability and performance of a commercial Flash technology with an advanced architecture to deliver increased storage density and unprecedented read/write speeds. The device also offers a range of features which improve overall system performance and provide a more robust user experience.

The device includes several features to improve its performance and reliability. These features include an advanced error correction, advanced wear leveling, and extra ECC protection. The advanced error correction technology allows for reliable data transfers even if the Flash device suffers certain types of errors. This technology makes the device suitable for usage in sensitive systems, such as medical and automotive. The advanced wear leveling feature ensures that the Flash device is evenly worn, which prolongs its lifespan. Finally, the extra ECC protection further protects the device from user error and system failures.

The device is designed to provide both high performance and high reliability. As such, it is suitable for a wide range of applications which require fast read and write speeds. One of these applications is the storage of large media files, such as high-definition videos. With its high transfer speed, the device can quickly store and retrieve large files without sacrificing system performance. Another application is the storage of important user data, such as passwords and personal information. By providing reliable data protection, the device can keep sensitive user data safe from unauthorized access.

The MT29F256G08EBHAFJ4-3RES is based on a 3D NAND architecture which allows for increased storage density and improved performance. In addition, the advanced error correction and wear leveling features further improve system performance, making the device suitable for a variety of applications.

The device also offers several advantages over other types of memory. For example, it is a non-volatile memory, which means that data stored in the device will not be lost when the power is turned off. In addition, the device is highly durable, making it suitable for use in conditions where other types of memory would be damaged. Finally, the device is highly cost-effective, making it an attractive storage solution for a variety of applications.

The MT29F256G08EBHAFJ4-3RES offers an excellent storage solution for a variety of applications. It provides reliable data storage and fast read and write speeds, making it suitable for use in a wide range of environments. Thanks to its advanced features, it is suitable for both sensitive and general applications. Finally, its cost-effective nature makes it an attractive option for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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