MT29F256G08EFEBBWP:B Allicdata Electronics
Allicdata Part #:

MT29F256G08EFEBBWP:B-ND

Manufacturer Part#:

MT29F256G08EFEBBWP:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256G PARALLEL 48TSOP
More Detail: FLASH - NAND Memory IC 256Gb (32G x 8) Parallel
DataSheet: MT29F256G08EFEBBWP:B datasheetMT29F256G08EFEBBWP:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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Memory plays very important role in our digital life, and MT29F256G08EFEBBWP:B, one of the popular memroy device for today\'s use, is widely known for its reliability and trustworthiness. As a member of NAND Flash Memory, MT29F256G08EFEBBWP:B has a wide application field and ease of use.It is a low-power NAND Flash device, supporting a wide range of application fields including consumer electronics, networking and communications, and more. It is commonly used in consumer electronicsApplications, ranging from mobile phones to other consumer appliances such as cameras, MP3 players, and portable game players. In these consumer electronics applications, MT29F256G08EFEBBWP:B can be used to store data and provide a reliable non-volatile data storage solution. It is also very suitable for applications prime in networking and communications. This includes wireless and wired networks, which employ MT29F256G08EFEBBWP:B as part of their internal data storage. Other networking and communication applications include LAN systems, industrial controllers, and test and instrumentation systems. MT29F256G08EFEBBWP:B has a working principle that makes it easy and convenient to use. It uses a technology called charge trap flash which prevents any data from being lost even after a power loss. The device stores data by trapping an electric charge on a dielectric material located between two electrodes, thereby creating a virtual capacitor. The trapped charge then can be read or written using the process of Fowler-Nordheim tunneling. It also does not require any SIM cards for its operation.Its storage capacity is also quite good. MT29F256G08EFEBBWP:B has a single-die storage capacity of 256GB and can support both SLC and MLC NAND Flash options. It is also capable of a rapid read speed of up to 195MB/s and a write speed of up to 150MB/s. Its power Consumption is also quite minimal since it operates at a low-voltage of 1.8V or 3.3V. MT29F256G08EFEBBWP:B also has a robust error-correction code (ECC) to ensure stable data storage and secure data transfers. The device is also compatible with several operating systems like Windows, Linux, and others. To summarize, MT29F256G08EFEBBWP:B is a reliable, low-power NAND Flash memory device with a wide application field that includes consumer electronics, networking, communications, and more. Its easy to use working principle, combined with its robust ECC, makes it a great option for data storage and secure data transfers. Its low-power consumption and high storage capacity are also advantageous features.

The specific data is subject to PDF, and the above content is for reference

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