MT29F2G08ABAEAH4-AATX:E

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Introduction

MT29F2G08ABAEAH4-AATX:E is a memory device which is built by Micron Technology Company. It is an 8Gb, 256-Mbyte multi-gigabit NAND Flash memory device with a 5.0V asynchronous interface. This product is advanced in its structure and small in size, making it ideal for use in embedded devices and other very compact applications.

Application Field

The MT29F2G08ABAEAH4-AATX:E memory device is ideal for use in high-density embedded applications due to its small size and high capacity. The device’s high-speed and low-cost are perfect for systems that require large memory storage but at a lower cost than what conventional memory offers. The device can also be used in handheld devices, such as MP3 players, smart phones, and mobile game consoles, as well as in aircraft, automotive, medical, and industrial applications.

The device can be used as OEM storage, namely original equippment memory. This means it can be used in applications such as embedded media processors, wireless networks, and intelligent home appliances. It can also be used as multi-chip package solutions, such as multi-chip computer systems and multi-memory storage solutions. Furthermore, it can be used in portable electronic many electronic systems, media players, and personal digital assistant (PDA) devices.

Working Principle

The main concept of the MT29F2G08ABAEAH4-AATX:E memory device is based on NAND flash technology. NAND flash memory is a type of nonvolatile semiconductor technology which stores data without the need for power or refresh cycles. This is done by using an array of transistors that make up the architecture for the memory cells that store the data. The device is designed using SLC (single-level cell) and TLC (triple-level cell) NAND flash come architectures and has a command set compliant with the Joint Electron Device Engineering Council (JEDEC) standards.

The MT29F2G08ABAEAH4-AATX:E integrates several host interface functions on a single chip, including write protection, ECC, and/or toggle feature. The device contains an array of up to 256M multi-gigabit NAND Flash cells that are organized as 2,048 blocks and are divided into four 256M regions. The device is controlled by an asynchronous 5V interface that supports a Serial Peripheral Interface (SPI) or industry standard Command Set Interface (CSI).

The device also has a number of advanced error correction and detection circuits, such as read disturbance detection and fail management, that provide additional safety for stored data. These circuits use ECC (error correction code) algorithms to detect and correct errors during operation, and also include fail management functions that provide rapid data restore with reliable error handling.

Conclusion

The MT29F2G08ABAEAH4-AATX:E is an advanced NAND flash memory device that can be used in a variety of embedded applications. Its small size and high capacity make it ideal for use in embedded devices, handheld devices,automotive, medical and industrial applications. Its ECC and fail management functions make it a reliable choice for data storage and its 5V interface easily integrates into most existing systems.

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