MT29F2G16ABBEAH4:E

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (128M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA (9x11)
Base Part Number:	MT29F2G16

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Introduction to Memory

Memory is a type of storage used to store digital data. It is commonly used in computer systems, typically in the form of Random Access Memory (RAM) or Read Only Memory (ROM). Memory can be used for a wide range of applications, including data storage, data processing, and programming.

MT29F2G16ABBEAH4:E Memory

MT29F2G16ABBEAH4:E is a type of memory designed for high-speed and low-power applications. It is designed using high bandwidth double Data Rate (HBDDR) technology, which ensures faster data transfer rates and reduces power consumption. The memory offers high-reliability and is used in many applications that require fast, reliable, low-power performance.

MT29F2G16ABBEAH4:E Application Field

MT29F2G16ABBEAH4:E is used in a wide range of applications, including industrial automation and control, digital imaging and multimedia, network communications and storage, and automotive electronics. In industrial automation, MT29F2G16ABBEAH4:E is used in a variety of applications, including machine vision, robotics, automated test systems, and industrial process control systems. In digital imaging, the memory is used for high-resolution imaging systems such as digital cameras and scanners. In network communications and storage, it is used in a variety of storage and communication devices, including hard drives, routers, and switches. In automotive electronics, the memory is used in automotive ECUs and body electronics systems.

MT29F2G16ABBEAH4:E Working Principle

MT29F2G16ABBEAH4:E is based on the HBDDR technology. It has a dual-channel structure which enables data transfer rates of up to 12.8 Gb/s per channel (25.6 Gb/s total). It is based on a self-timed write algorithm which allows for self-timed data transfer and auto-correction on any write attempt. This means that data in each channel will be written correctly, even if one of the two channels has an error.The memory also has built-in error correction code (ECC) which can detect and correct single-bit errors in data. This ensures that the data stored in the memory is reliable and can be retrieved without data corruption. The ECC is also used to prevent accidental damage to the memory caused by electromagnetic interference or other external factors.In addition, the memory is designed to supply maximum power only when it is actually needed, reducing power consumption on idle cycles. This makes it ideal for low-power applications, such as embedded and mobile devices, where power efficiency is critical.

Conclusion

MT29F2G16ABBEAH4:E is a type of memory designed for high-speed and low-power applications. It is used in a wide range of applications, including industrial automation and control, digital imaging and multimedia, network communications and storage, and automotive electronics. The memory is based on HBDDR technology and has built-in error correction code (ECC) which ensures reliable data storage and retrieval. The memory also has power-saving features that reduce power consumption on idle cycles, making it ideal for embedded and mobile devices.

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