| Allicdata Part #: | MT29F2G16ABBEAHC-AIT:E-ND |
| Manufacturer Part#: |
MT29F2G16ABBEAHC-AIT:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 2G PARALLEL FBGA |
| More Detail: | FLASH - NAND Memory IC 2Gb (128M x 16) Parallel |
| DataSheet: | MT29F2G16ABBEAHC-AIT:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 2Gb (128M x 16) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
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Introduction to MT29F2G16ABBEAHC-AIT:E Memory
The MT29F2G16ABBEAHC-AIT:E memory is a type of nonvolatile flash memory that is part of the 2 Gigabit (Gb) NAND Flash product family. This memory can be used in a variety of applications that require reliable, fast data storage and access. In this article, we will take a look at the application field of the product and its working principle.
Application Field of MT29F2G16ABBEAHC-AIT:E Memory
The MT29F2G16ABBEAHC-AIT:E memory is designed for applications requiring high levels of data integrity, such as communications and networking equipment, smartphones, solid-state drives, and consumer electronics. As part of a NAND Flash memory family, the benefits include low power consumption, energy efficiency, and low cost. In addition, the product features increased integration and a reduction in design time and cost due to its system-level designs.
The MT29F2G16ABBEAHC-AIT:E memory is also suitable for automotive applications, embedded systems, industrial applications, and medical devices.
Working Principle of MT29F2G16ABBEAHC-AIT:E Memory
NAND flash memory chips such as the MT29F2G16ABBEAHC-AIT:E consist of billions of transistors arranged in a two-dimensional grid. Each one of these transistors stores a single bit, which is a 0 or a 1. To store and read information from the memory chip, electronic signals are sent through the transistor and received at the other end of the circuit.
Data is read from the memory cell by sending out a charge which is called a gate voltage. This gate voltage causes a current to flow that allows the data to be read from the source. Similarly, data is written to the memory cell by applying a charge on the gate, allowing the data to be written to the cell.
The MT29F2G16ABBEAHC-AIT:E memory chip also supports the XOR, HAMMER, and Genie encryption algorithms to provide additional data security. Additionally, the memory chip is built with ECC (Error Correction Code) technology which helps to detect, and in some cases repair, errors that may occur during the read or write operations.
Conclusion
The MT29F2G16ABBEAHC-AIT:E memory is a reliable and fast non-volatile flash memory that is suitable for a variety of applications. Its design offers low power consumption, energy efficiency, and cost savings. Additionally, it supports a range of encryption algorithms and ECC technology, giving users the extra assurance that their data is secure.
The specific data is subject to PDF, and the above content is for reference
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MT29F2G16ABBEAHC-AIT:E Datasheet/PDF