MT29F32G08ABCABH1-10:A Allicdata Electronics
Allicdata Part #:

MT29F32G08ABCABH1-10:A-ND

Manufacturer Part#:

MT29F32G08ABCABH1-10:A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32G PARALLEL 100MHZ
More Detail: FLASH - NAND Memory IC 32Gb (4G x 8) Parallel 100M...
DataSheet: MT29F32G08ABCABH1-10:A datasheetMT29F32G08ABCABH1-10:A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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MT29F32G08ABCABH1-10:A is a kind of NAND Flash memory used in electronic products. It was developed by Micron Technology and has a wide range of applications, including digital data storage. In addition, it can also be used in digital media players, wireless communication terminals, digital cameras, USB drives and other electronic products.

The MT29F32G08ABCABH1-10: A device delivers reliable data storage capability and is a cost-effective solution for OEMs and system integrators. It is designed to provide high performance and flexibility for various purposes, including high-density storage and long battery life. The device offers a wide range of features and a variety of options to match and optimise system design requirements.

MT29F32G08ABCABH1-10:A is based on NAND Flash memory, which uses an array of memory cells connected in a “floating gate” formation. Each cell holds a single bit of data. In order for data to be written to the cell, electrons are injected onto the floating gate by applying a high electric potential to electrode 1. This requires the electric potential of electrode 2 to be inverted. When writing is completed, the two capacitors are charged again so that the memory cell can hold its data. To read the data, the electric potential of the two electrodes is again inverted and read out. This process is referred to as "floating gate programming".

In terms of its performance, the MT29F32G08ABCABH1-10:A is able to deliver significant read/write speed with a maximum data rate of over 167MB/s. The device also supports multiple error correction code (ECC) algorithms to ensure data integrity, even at the highest speeds. Moreover, this device also offers support for advanced data security features such as writable control block (WCB) and writable ID (WID). It is also compatible with various operating systems, which makes its usage very easy for developers.

Since the MT29F32G08ABCABH1-10:A was developed with the aim of providing a reliable and dependable data storage solution, the device adopts high quality assurance measures such as a built-in hardware-based ECC system and multiple test cycles. This ensures that the memory is always operating at its best and offers reliable storage. The device also supports a variety of high-end features such as temperature range designation, Sleep Mode and Deep Power Down support.

Overall, the MT29F32G08ABCABH1-10:A is an excellent and cost-effective choice for a reliable storage solution. It comes with a variety of features which makes it a popular choice amongst designers, engineers and system integrators. In addition, its support for various operating systems and its advanced security measures makes it a great option for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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