MT29F32G08ABEDBJ4-12:D Allicdata Electronics
Allicdata Part #:

MT29F32G08ABEDBJ4-12:D-ND

Manufacturer Part#:

MT29F32G08ABEDBJ4-12:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32G PARALLEL 83MHZ
More Detail: FLASH - NAND Memory IC 32Gb (4G x 8) Parallel 83MH...
DataSheet: MT29F32G08ABEDBJ4-12:D datasheetMT29F32G08ABEDBJ4-12:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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Mt29f32g08abedbj4-12:d is a memory category device made by Micron technology. It is a 512 megabits NAND Flash memory with the capacity of 32 gigabytes. It is categorized as NAND Flash memory due to its nature of storing information, non-volatile and the ability to retain data even in the absence of power. This device has a very wide application field and a great performance in data efficiency and reliability.

Application Field

Mt29f32g08abedbj4-12:d memory is applicable in a great variety of things such as mobile phones, tablets, notebook computers, digital cameras, portable media players and other electronic devices. It supports both direct booting and boot-up code, enabling easier device customization. This memory device has good compatibility with existing hardware and it has good stability for data transmission.

It is widely used in applications such as digital photography, digital video, camera phones, gaming devices and medical/automotive applications. It also provides excellent data transfer performance, which makes it ideal for use in high-performance systems. Therefore, it can be used in data-intensive applications such as high-definition video and audio playback, digital video recording and other data-heavy operations.

Working Principle

The primary mechanism of Mt29f32g08abedbj4-12:d memory is Flash memory, which uses electrons to store information. The flash memory consists of a large number of cells, each cell can be charged or discharged through the programming method, thus to form the information. The transistors in the cell serve as the channel for the electrons to flow in and out, and the amount of electrons that a cell can contain determines the bit value stored in it.

Flash memory can retain stored information over a relatively long period of time even when there is no power supply. With the use of sophisticated error correction algorithms, the reading and writing of the cells can be enhanced, drastically improving the performance and reliability of the memory units. The reading and writing speed is also greatly enhanced by using more advanced technologies.

Although flash memory devices have a limited amount of write/erase cycles, they have the capability to endure a large number of characters which makes them highly durable and reliable. Furthermore, by using specific programming methods, data can be retrieved quickly, with fast access times compared to traditional RAM-based devices.

Conclusion

In conclusion, Mt29f32g08abedbj4-12:d memory is a 512 megabits NAND Flash memory with the capacity of 32 gigabytes. It is suitable for a wide variety of applications, from mobile phones to HDV cameras and is robust when it comes to both reading and writing operations. It also offers good compatibility, excellent data transfer performance, and its capability to retain stored data for a long period of time even when there is no power supply.

The specific data is subject to PDF, and the above content is for reference

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