
Allicdata Part #: | MT29F32G08ABEDBJ4-12:D-ND |
Manufacturer Part#: |
MT29F32G08ABEDBJ4-12:D |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 32G PARALLEL 83MHZ |
More Detail: | FLASH - NAND Memory IC 32Gb (4G x 8) Parallel 83MH... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 32Gb (4G x 8) |
Clock Frequency: | 83MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Mt29f32g08abedbj4-12:d is a memory category device made by Micron technology. It is a 512 megabits NAND Flash memory with the capacity of 32 gigabytes. It is categorized as NAND Flash memory due to its nature of storing information, non-volatile and the ability to retain data even in the absence of power. This device has a very wide application field and a great performance in data efficiency and reliability.
Application Field
Mt29f32g08abedbj4-12:d memory is applicable in a great variety of things such as mobile phones, tablets, notebook computers, digital cameras, portable media players and other electronic devices. It supports both direct booting and boot-up code, enabling easier device customization. This memory device has good compatibility with existing hardware and it has good stability for data transmission.
It is widely used in applications such as digital photography, digital video, camera phones, gaming devices and medical/automotive applications. It also provides excellent data transfer performance, which makes it ideal for use in high-performance systems. Therefore, it can be used in data-intensive applications such as high-definition video and audio playback, digital video recording and other data-heavy operations.
Working Principle
The primary mechanism of Mt29f32g08abedbj4-12:d memory is Flash memory, which uses electrons to store information. The flash memory consists of a large number of cells, each cell can be charged or discharged through the programming method, thus to form the information. The transistors in the cell serve as the channel for the electrons to flow in and out, and the amount of electrons that a cell can contain determines the bit value stored in it.
Flash memory can retain stored information over a relatively long period of time even when there is no power supply. With the use of sophisticated error correction algorithms, the reading and writing of the cells can be enhanced, drastically improving the performance and reliability of the memory units. The reading and writing speed is also greatly enhanced by using more advanced technologies.
Although flash memory devices have a limited amount of write/erase cycles, they have the capability to endure a large number of characters which makes them highly durable and reliable. Furthermore, by using specific programming methods, data can be retrieved quickly, with fast access times compared to traditional RAM-based devices.
Conclusion
In conclusion, Mt29f32g08abedbj4-12:d memory is a 512 megabits NAND Flash memory with the capacity of 32 gigabytes. It is suitable for a wide variety of applications, from mobile phones to HDV cameras and is robust when it comes to both reading and writing operations. It also offers good compatibility, excellent data transfer performance, and its capability to retain stored data for a long period of time even when there is no power supply.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MT29F1G08ABBDAH4:D | Micron Techn... | -- | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F64G08CFACBWP-12:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
MT29F256G08CMCABH2-10Z:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F512G08CUCDBJ6-6R:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 16... |
MT29E1T08CMHBBJ4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29E768G08EEHBBJ4-3ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 768G PARALLEL 33... |
MT29F1T208ECCBBJ4-37:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.125T PARALLEL ... |
MT29TZZZ4D4BKERL-125 W.94M TR | Micron Techn... | 0.0 $ | 1000 | MCP 4GX8/128MX32 PLASTIC ... |
MT29F1T08CPCBBH8-6C:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1G08ABAEAWP:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F2G08ABAEAH4-E:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F16G08ABABAWP-AIT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL TSO... |
MT29F2G01ABAGDSF-IT:G | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G SPI SOICFLASH... |
MT29TZZZ8D5JKEZB-107 W.95Q | Micron Techn... | 0.0 $ | 1000 | MLC EMMC/LPDDR3 72GMemory... |
MT29F1G08ABBEAM68M3WC1 | Micron Techn... | 0.0 $ | 1000 | SLC 1G DIE 128MX8Memory I... |
MT29F2G08ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F2G16ABDHC-ET:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
MT29F1G16ABBEAH4-ITX:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29C4G96MAAHBACKD-5 WT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 4G PARAL 137... |
MT29F1T08CPCABH8-6:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 166M... |
MT29F256G08CJAAAWP-ITZ:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 48... |
MT29F16G08CBECBL72A3WC1P TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL WAF... |
MT29F4G16ABADAM60A3WC1 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL WAFE... |
MT29F1T08CQCBBG2-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F1T08CUCBBH8-6R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29F384G08EBHBBJ4-3RES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 384G PARALLEL 33... |
MT29F1T08EMHAFJ4-3RES:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 333M... |
MT29F256G08CECEBJ4-37ITRES:E TR | Micron Techn... | 0.0 $ | 1000 | MLC 256G 32GX8 VBGA IT DD... |
MT29F1G08ABAEAWP-IT:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 48TS... |
MT29F256G08AUCABH3-10IT:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
MT29F32G08AFACAWP-IT:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 48T... |
MT29F1G08ABBDAH4-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
MT29F16G08ABACAWP-Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F16G08ABACAWP:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 48T... |
MT29F1T08CUCABK8-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
MT29E2T08CUHBBM4-3:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 333M... |
MT29F256G08CMEDBJ5-12IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 83... |
MT29F2T08CVCCBG6-6C:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 167M... |
MT29F128G08AKEDBJ5-12:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 13... |
MT29F32G08ABCDBJ4-6ITR:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32G PARALLEL 166... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
