MT29F4G01ABAFDWB-IT:F Allicdata Electronics
Allicdata Part #:

MT29F4G01ABAFDWB-IT:F-ND

Manufacturer Part#:

MT29F4G01ABAFDWB-IT:F

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G SPI UPDFN
More Detail: FLASH - NAND Memory IC 4Gb (4G x 1) SPI
DataSheet: MT29F4G01ABAFDWB-IT:F datasheetMT29F4G01ABAFDWB-IT:F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (4G x 1)
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory is a key component of computer systems and is used to store data and programs while they are being processed. The MT29F4G01ABAFDWB-IT:F is a type of memory that has some very useful features and applications. This article will explain the application field and working principle of this type of memory.

The MT29F4G01ABAFDWB-IT:F memory is a type of NAND flash multi-level cell (MLC) memory that is commonly used in portable data storage applications such as USB flash drives, mp3 players, digital cameras and smart phones. The main benefits of using this type of memory are its low power consumption, high write endurance and fast data transfer rates. It is also very rugged and can withstand harsh environmental conditions such as extreme temperatures, humidity and shock.

In terms of its application field, the MT29F4G01ABAFDWB-IT:F memory can be used to store a wide range of data types including photos, videos, music and other files. It is also widely used in embedded systems including automotive infotainment systems, digital signage and wireless routers. It is also used in industrial automation systems and aerospace applications.

When it comes to the working principle of the MT29F4G01ABAFDWB-IT:F memory, it uses a system of logical gates that are created using an array of cells. Each cell contains two transistors and a terminal that connects the two. Each memory cell can store two bits of information and the two bits can be read or written to the cell simultaneously. This allows the memory to be read and written much faster than traditional memory.

The MT29F4G01ABAFDWB-IT:F memory is also highly reliable and can maintain data integrity even after power loss. This is due to its built in error correction technology. This technology uses an algorithm that can detect errors that occur during data transfer or storage and can correct them. This ensures that the data will not be corrupted and will remain intact even after power outages.

In conclusion, the MT29F4G01ABAFDWB-IT:F is a type of NAND flash multi-level cell (MLC) memory that is commonly used in portable data storage applications such as USB flash drives, mp3 players, digital cameras and smart phones. It is also widely used in embedded systems, industrial automation systems and aerospace applications. The main benefit of this type of memory is its low power consumption, high write endurance, fast data transfer rates and built in data integrity protection.

The specific data is subject to PDF, and the above content is for reference

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