MT29F4G08ABAEAH4-IT:E

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A memory is one of the most essential components of any computing device. It provides the means to store data and programs, allowing the device to perform various tasks. Without memory, a computer system would be unable to recall and execute instructions, making it useless. The MT29F4G08ABAEAH4-IT:E is a quad-level-cell NAND Flash memory device from Micron Technology. It is suitable for a wide range of applications and provides various features such as high performance, low power consumption, and an enhanced data retention time. In this article, we’ll take a look at the application field and working principle of the MT29F4G08ABAEAH4-IT:E.

Application Field

The MT29F4G08ABAEAH4-IT:E is a quad-level cell (QLC) NAND Flash memory device designed to provide high reliability and reduce overall system complexity and cost. It is suitable for a wide range of applications such as solid state drives (SSD), cameras, camcorders, and gaming consoles. The device has the ability to provide enhanced data retention, power-saving performance and high data transfer rate. Additionally, it has ECC protection for error correction, ensuring data integrity and reliability. The device is available in densities of 128Gb and 256Gb.

Working Principle

The MT29F4G08ABAEAH4-IT:E has an advanced four-channel architecture with a high-performance NAND Flash memory structure with four levels per cell. It is based on multi-level cell (MLC) technology, which stores four bits per cell, allowing for higher densities. The device also features Multi-Level Programming Mode (MLP) which provides enhanced programming performance, allowing for high-speed data transfer rates of up to 104 MB/s.

The device also features Advanced Defect Management, which allows for improved reliability and uniformity during manufacturing. Additionally, the device is designed with multiple power savings features such as Power-Down Mode, Power-Off Mode, and Selective Suspend Power Reduction Mode, ensuring low power consumption while delivering efficient power management to prolong cell life.

In terms of error correction, the device is equipped with Error Correction Code (ECC) capabilities, which allow for greater accuracy in data storage and transmission. The ECC protects data integrity against errors due to cell degradation, preventing corruption of data. Additionally, the device also supports Customer Specific Firmware, which provides customizable options and settings to optimize user-defined operations.

Conclusion

The MT29F4G08ABAEAH4-IT:E is a quad-level cell (QLC) NAND Flash memory device designed for a wide variety of applications. It features advanced features such as Multi-Level Programming Mode, Error Correction Code and low power consumption. Additionally, it provides enhanced data retention and fast data transfer rates. Overall, the MT29F4G08ABAEAH4-IT:E offers a reliable and efficient memory solution for various computing devices.

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