MT29F4G08ABBDAH4-IT:D Allicdata Electronics
Allicdata Part #:

MT29F4G08ABBDAH4-IT:D-ND

Manufacturer Part#:

MT29F4G08ABBDAH4-IT:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 6...
DataSheet: MT29F4G08ABBDAH4-IT:D datasheetMT29F4G08ABBDAH4-IT:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Base Part Number: MT29F4G08
Description

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Memory is a physical device in a computer-like structure dedicated to store data. MT29F4G08ABBDAH4-IT:D is an ideal type of memory that is commonly used, especially in today’s technology and gaming. This type of memory has very good performance and low power requirement, making it a great choice for industrial, aerospace, automotive, and consumer applications. It is an 8-gigabyte DRAM module, with an overall capacity of up to 32 gigabytes in an ATA-4 format.
The MT29F4G08ABBDAH4-IT:D is an MLC (Multi-Level Cell) NAND type DRAM memory module. This has a wide range of applications, but is primarily used as a storage solution for consumer electronics, portable media players, gaming consoles, and other consumer-oriented devices. This type of memory is also employed in industrial and military applications where high reliability is required.
The technology of MT29F4G08ABBDAH4-IT:D is based on a Multi-Level Cell architecture. This design allows multiple levels of data to be stored within a single cell. This allows the module to store up to 32 Gigabytes of data, which is much more than a traditional DRAM module. It also provides higher storage density, which leads to increased speed and power efficiency.
The working principle of MT29F4G08ABBDAH4-IT:D is also based on a Multi-Level Cell architecture. The working principle is based on the four different cell states, with each cell having two read/write states (on/off) and two refresh states (normal/refresh). The cell states are stored within a storage array, which is then connected to the memory controller.
The module is programmed with a controller which reads and writes to the storage array. While programming, the controller runs a special algorithm which reads the data and stores it within the different cell states. The data is read and written to the module in blocks, and a refresh cycle is initiated as needed.
As previously mentioned, the MT29F4G08ABBDAH4-IT:D memory module has a wide range of applications. It is often used for portable media players, gaming consoles, industrial applications, and in military equipment. It is also reliable, fast, and uses less power, making it a great option for any application.
In conclusion, the MT29F4G08ABBDAH4-IT:D memory module is an 8 gigabyte DRAM module that has an overall capacity of up to 32 gigabytes in an ATA-4 format. It is an MLC (Multi-Level Cell) NAND type DRAM which is ideal for applications such as portable media players, gaming consoles, industrial applications, and military equipment. The working principle is based on a Multi-Level Cell architecture, allowing multiple levels of data to be stored within a single cell. Thanks to its reliability, fast performance, and low power requirements, the MT29F4G08ABBDAH4-IT:D is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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