MT29F4G16ABBDAH4-AIT:D TR

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MT29F4G16ABBDAH4-AIT:D TR Application Field and Working Principle

As a high capacity 4Gbit NAND Flash memory device, MT29F4G16ABBDAH4-AIT:D TR is widely used by computer, digital camera, mobile phone and digital player etc. It is fabricated by BiCS3, 64L 3D NAND from Toshiba with 24nm process technology. It also features a unique interface and communicate via a standard NAND protocol.

Application Field

MT29F4G16ABBDAH4-AIT:D TR is widely used in a variety of applications, including the following:

• Digital cameras
• Digital video players
• Cell phones
• Mobile phones
• Computer/networking equipment
• Automotive/portable navigation systems
• Embedded consumer systems
• Medical devices
• Set-top boxes

All of these applications require reliable, large capacity memory – and that is precisely what the MT29F4G16ABBDAH4-AIT:D TR delivers.

Working Principles

MT29F4G16ABBDAH4-AIT:D TR NAND Flash memory uses a standard NAND protocol which provides command, address, and data functions. The real working principle of the memory device is based on two main mindsets. First, it uses a two-plane architecture to separate and expedite the data that the NAND Flash memory device receives and transmits. Second, it uses a dynamic data refresh algorithm, which objects to refresh certain pages of the memory device to ensure low error rates.

MT29F4G16ABBDAH4-AIT:D TR NAND Flash memory device is internally divided into blocks of 128 pages, 512 bytes each. The device has 16 planes, each of which is 4K pages per block. It requires a minimum of 16 clock cycles for a page read/write operation. The number of clock cycles is based on the speed of the memory device.

The MT29F4G16ABBDAH4-AIT:D TR NAND Flash memory device uses four physical pins, from A0-A3, to configure the individual I/O ports. The device also uses an internal buffer, which contains the page data and page address for each read or write operation. The control logic circuits use the page address for chip selection and control and transfer the data from the memory device to the host or vice-versa.

The controller logic sequence is implemented in the controller logic blocks and determines the flow of logic within the NAND Flash device. The pages are read through the NAND Flash device in a sequential order. The device has a two-plane architecture, which allows the user to read/write simultaneously on two planes.

In addition, the MT29F4G16ABBDAH4-AIT:D TR NAND Flash memory device uses an internal parity generator to generate check bits after a write operation. The device uses error correction codes (ECCs) provided by the user to detect errors in the page data and generate parity bits for corrective action. The device is also capable of Toggle Mode operation, which enables the user to transmit and receive data at higher speeds.

In summary, the MT29F4G16ABBDAH4-AIT:D TR NAND Flash memory device is a high capacity 4Gbit memory device that uses a unique two-plane architecture and dynamic data refresh algorithm. It provides rapid data read/write operations and is suitable for a wide range of applications.

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