MT29F4G16ABBDAH4-IT:D TR Allicdata Electronics
Allicdata Part #:

MT29F4G16ABBDAH4-IT:DTR-ND

Manufacturer Part#:

MT29F4G16ABBDAH4-IT:D TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 4Gb (256M x 16) Parallel ...
DataSheet: MT29F4G16ABBDAH4-IT:D TR datasheetMT29F4G16ABBDAH4-IT:D TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Base Part Number: MT29F4G16
Description

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Memory is a critical component for any modern computing system and is used within a variety of different applications. As the frequency and complexity of the data handled and stored by computing systems increases, memory devices need to become more reliable and efficient. One memory device that can provide these benefits is the MT29F4G16ABBDAH4-IT:D TR. This memory device is a member of the family of interfaced, multi-level cell (MLC) NAND flash memories, offering high performance and reliability.

The MT29F4G16ABBDAH4-IT:D TR is a 1Gbit memory device, offering a wide range of features and capabilities, including high speed and low power consumption. It is designed for use in a variety of applications, including mobile phone, tablets, digital cameras, and other consumer electronics products. The device offers an efficient 4KB page size, enabling it to transfer large amounts of data quickly.

In addition to its speed and power efficiency, the MT29F4G16ABBDAH4-IT:D TR also offers high levels of reliability. The device is designed with a low error correction code (ECC), enabling it to detect and correct any errors in the data being stored. This means that the memory device can be relied upon to deliver accurate information even in environments with high levels of interference. The device has been rigorously tested to ensure that it can withstand shock, vibration, and temperatures up to 125C.

The MT29F4G16ABBDAH4-IT:D TR works by storing data in an array of memory cells. Each cell can store a single bit of data, and the data is written and read as an array. This enables the device to handle larger amounts of data than would otherwise be possible with a single bit of memory. To improve performance, the device can also transfer data using a burst mode, which allows multiple bits of data to be transferred simultaneously.

The structure of the MT29F4G16ABBDAH4-IT:D TR is designed for maximum reliability and efficiency. The device has a layered structure that enables the storing of data in multiple planes, thus improving the speed of the access time for data. The device also offers error correction capability, ensuring that data can be read consistently and accurately even if there is some level of interference or corruption.

The MT29F4G16ABBDAH4-IT:D TR is a versatile memory device that can be used in a variety of applications. Its high speed, low power consumption, and high reliability make it an ideal choice for devices that require large amounts of data to be stored and handled. It has been successfully used in a wide range of applications, including digital cameras, mobile phones, tablets, and other consumer electronics products.

The specific data is subject to PDF, and the above content is for reference

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