| Allicdata Part #: | MT29F4G16ABBDAH4-IT:DTR-ND |
| Manufacturer Part#: |
MT29F4G16ABBDAH4-IT:D TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 4G PARALLEL 63VFBGA |
| More Detail: | FLASH - NAND Memory IC 4Gb (256M x 16) Parallel ... |
| DataSheet: | MT29F4G16ABBDAH4-IT:D TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 4Gb (256M x 16) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-VFBGA (9x11) |
| Base Part Number: | MT29F4G16 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a critical component for any modern computing system and is used within a variety of different applications. As the frequency and complexity of the data handled and stored by computing systems increases, memory devices need to become more reliable and efficient. One memory device that can provide these benefits is the MT29F4G16ABBDAH4-IT:D TR. This memory device is a member of the family of interfaced, multi-level cell (MLC) NAND flash memories, offering high performance and reliability.
The MT29F4G16ABBDAH4-IT:D TR is a 1Gbit memory device, offering a wide range of features and capabilities, including high speed and low power consumption. It is designed for use in a variety of applications, including mobile phone, tablets, digital cameras, and other consumer electronics products. The device offers an efficient 4KB page size, enabling it to transfer large amounts of data quickly.
In addition to its speed and power efficiency, the MT29F4G16ABBDAH4-IT:D TR also offers high levels of reliability. The device is designed with a low error correction code (ECC), enabling it to detect and correct any errors in the data being stored. This means that the memory device can be relied upon to deliver accurate information even in environments with high levels of interference. The device has been rigorously tested to ensure that it can withstand shock, vibration, and temperatures up to 125C.
The MT29F4G16ABBDAH4-IT:D TR works by storing data in an array of memory cells. Each cell can store a single bit of data, and the data is written and read as an array. This enables the device to handle larger amounts of data than would otherwise be possible with a single bit of memory. To improve performance, the device can also transfer data using a burst mode, which allows multiple bits of data to be transferred simultaneously.
The structure of the MT29F4G16ABBDAH4-IT:D TR is designed for maximum reliability and efficiency. The device has a layered structure that enables the storing of data in multiple planes, thus improving the speed of the access time for data. The device also offers error correction capability, ensuring that data can be read consistently and accurately even if there is some level of interference or corruption.
The MT29F4G16ABBDAH4-IT:D TR is a versatile memory device that can be used in a variety of applications. Its high speed, low power consumption, and high reliability make it an ideal choice for devices that require large amounts of data to be stored and handled. It has been successfully used in a wide range of applications, including digital cameras, mobile phones, tablets, and other consumer electronics products.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT29F1G16ABCHC-ET:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F4G08ABADAWP-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F1G08ABBDAH4:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F1G08ABBDAH4-ITX:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F256G08AUAAAC5-Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 52... |
| MT29F512G08CMCABH7-6R:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 15... |
| MT29F64G08CFACBWP-12Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
| MT29F1T08CPCCBH8-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
| MT29F1T08CUCCBH8-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
| MT29F256G08AMCBBH7-6IT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 16... |
| MT29F2T08CTCCBJ7-6R:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 167M... |
| MT29F256G08EBHAFB16A3WTA | Micron Techn... | 0.0 $ | 1000 | TLC 256G DIE 32GX8Memory ... |
| MT29F256G08EBCAGJ4-5M:A TR | Micron Techn... | 0.0 $ | 1000 | TLC 256G 32GX8 VBGAMemory... |
| MT29F1G16ABBEAH4:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29KZZZ6D4AGLDM-5 W.6N4 TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 38G MLC DDRMemor... |
| MT29F16G08ABCCBH1-10Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 100... |
| MT29F64G08CECCBH1-12Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F512G08CMEABH7-12:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 83... |
| MT29E6T08ETHBBM5-3ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 6T PARALLEL 333M... |
| MT29F128G08EBEBBWP:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 48... |
| MT29F4G16ABAFAH4-AITES:F | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
| MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29C1G12MAACAEAML-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
| MT29F1G16ABBDAH4-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F32G08ABAAAWP-ITZ:A TR | Micron Techn... | 29.55 $ | 480 | IC FLASH 32G PARALLEL 48T... |
| MT29F4G08ABADAH4-IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F1T08CUEABH8-12:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 83MH... |
| MT29C1G12MAAJVAKC-5 IT TR | Micron Techn... | 0.0 $ | 1000 | MCP 64MX16/32MX16 PLASTIC... |
| MT29F128G08CECDBJ4-6R:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 16... |
| MT29F128G08EBCDBJ4-5M:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 20... |
| MT29F1HT08ELHBBG1-3R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.5T PARALLEL 33... |
| MT29F4G08ABADAH4-AATX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
| MT29F512G08CECBBJ4-37:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 26... |
| MT29F32G08ABEDBM83C3WC1 | Micron Techn... | 0.0 $ | 1000 | SLC 32G DIE 4GX8Memory IC |
| MT29C8G96MAAFBACKD-5 WT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 8G PARALLEL ... |
| MT29F4G16ABADAH4-AIT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F256G08CMCABH2-12:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29F256G08AUAAAC5-ITZ:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 52... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT29F4G16ABBDAH4-IT:D TR Datasheet/PDF