MT29F512G08CKCABH7-6:A Allicdata Electronics
Allicdata Part #:

MT29F512G08CKCABH7-6:A-ND

Manufacturer Part#:

MT29F512G08CKCABH7-6:A

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512G PARALLEL 166MHZ
More Detail: FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 16...
DataSheet: MT29F512G08CKCABH7-6:A datasheetMT29F512G08CKCABH7-6:A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: --
Supplier Device Package: --
Base Part Number: MT29F512G08
Description

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MT29F512G08CKCABH7-6:A application field and working principle

Introduction

MT29F512G08CKCABH7-6 is an IC of MLC NAND Flash memory product. It belongs to the category of memory and can provide up to 64GB (gigabytes) of data storage capacity. It offers high endurance and reliability under extreme conditions, making it ideal for use in a wide range of applications, including mobile phones, tablets, cameras, gaming devices, automotive systems and more.

Application Field

MLC NAND Flash technology provides an efficient, cost-effective way to store data. The MT29F512G08CKCABH7-6 IC is specifically designed for applications requiring high data throughput performance, reliability and endurance.

This NAND Flash IC can support transfer rates of up to 200MB per second. This makes it perfect for capturing high-definition video at full frame rate as well as for playback of streaming media.

Additionally, MT29F512G08CKCABH7-6 has a write endurance rated at up to 3,000 cycles, which makes it one of the most reliable NAND Flash devices on the market for uses such as automotive applications where the conditions may be extreme.

Working Principle

The MT29F512G08CKCABH7-6 IC is a multi-level cell (MLC) NAND Flash memory device. This type of memory is constructed by connecting multiple Memory Cells in an array. Each Memory Cell is composed of two storage elements: a floating gate transistor and a control gate.

To write data to the Memory Cell, a voltage is applied to the control gate, which then turns on the transistor for a given amount of time. This allows electrons to be stored in the floating gate. In order to erase data from the Memory Cell, a voltage is applied in the opposite direction to the control gate, allowing the charge stored in the floating gate to be removed.

The MT29F512G08CKCABH7-6 IC supports multiple bit programming, meaning that more than one bit can be stored in each Memory Cell. This allows for higher storage capacity with smaller devices, making it ideal for a wide range of applications.

Conclusion

The MT29F512G08CKCABH7-6 IC is a MLC NAND Flash memory device offering high performance, reliability and endurance. It is specifically designed for applications requiring fast data throughput and is perfect for capturing high-definition video. Additionally, the device has a write endurance rated at up to 3,000 cycles, making it one of the most reliable NAND Flash devices available. It is ideal for a wide range of applications, including mobile phones, tablets, cameras, gaming devices, automotive systems and more.

The specific data is subject to PDF, and the above content is for reference

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