MT29F512G08CMCBBH7-6ITR:B

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MT29F512G08CMCBBH7-6ITR:B is an intelligent, high-density, quad-level cell (QLC) NAND Flash Memory that enables customers to store large amounts of data quickly with high reliability and performance. It provides high performance, low power, and superior endurance for a wide variety of applications, including automotive, medical, and industrial. MT29F512G08CMCBBH7-6ITR:B is ideal for storage of high resolution photos, videos, and other large data files.

MT29F512G08CMCBBH7-6ITR:B can store up to 512 gigabytes (GB) of data in a single chip and is available in densities of 1‐128 gigabytes (GB), 256GB, and 512GB configurations. The superior speed and endurance offered by the MT29F512G08CMCBBH7-6ITR:B also makes it perfect for write intensive applications such as surveillance video systems, digital video recording (DVR) systems, and audio video applications.

The MT29F512G08CMCBBH7-6ITR:B employs advanced high-speed write and read algorithms, which results in faster storage and retrieval of data from the device. It also supports up to 2,000 random program/erase (P/E) cycles, with no degradation of performance. This provides superior data retention, which is critical for long-term storage of data.

The MT29F512G08CMCBBH7-6ITR:B is also designed for maximum convenience and security, with a range of voltage and protocol options. It supports a variety of protocols, including Open NAND Flash Interface (ONFI), Toggle 2.0 and Toggle 1.0, and the high‐speed Universal Flash Storage (UFS) protocol. It also has additional features such as Data Protection, Error Correction Code (ECC), and an on-chip controller with an integrated memory test engine (MTE).

In terms of application field, the MT29F512G08CMCBBH7-6ITR:B is suitable for a wide range of applications. It can be used in consumer electronics, set‐top boxes, portable media players, digital cameras, and other digital audio and video devices. Additionally, the device is suitable for automotive, industrial, and medical applications, as it offers high reliability and superior performance for these types of applications.

The MT29F512G08CMCBBH7-6ITR:B uses a quad‐level cell NAND architecture to provide an efficient storage solution. In this architecture, memory cells are divided into four regions, which enables multiple bit storage per cell. This leads to faster storage speed and reduced power consumption, as multiple bits can be written into and read from the same cell at the same time. This architecture also allows for a higher storage density because of its improved signal-to-noise ratio.

In summary, the MT29F512G08CMCBBH7-6ITR:B is an advanced, quad-level cell NAND flash memory device, which provides excellent data storage and retrieval performance. It supports a wide range of protocols and has a long endurance, making it suitable for a variety of applications. Additionally, its quad-level cell architecture enables higher storage density, improved signal-to-noise ratio, and faster storage speeds.

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