MT29F512G08CMCEBJ4-37ITRES:E TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential technological resource used in every aspect of life, from manipulating large data sets to storing machine code and user input. One such type of memory is the MT29F512G08CMCEBJ4-37ITRES:E. This type of memory is used in many different applications and has specific characteristics that make it suitable for certain uses. This article will explore the application fields and working principles of MT29F512G08CMCEBJ4-37ITRES:E memory.

MT29F512G08CMCEBJ4-37ITRES:E is a type of NAND flashes memory that uses an advanced FLASH memory process technology. It is designed for high-speed, low-power applications, such as multimedia content and programs. In terms of size, it measures 11.5 x 7.5 x 0.5mm, making it extremely compact. It has an operating temperature of between -40 and 85 degrees Celsius. The MT29F512G08CMCEBJ4-37ITRES:E is available in two versions; the first offers 512MBit of non-volatile memory, while the second offers 1GBit. Both versions have an expandable memory capacity of up to 256GB.

The main application field for the MT29F512G08CMCEBJ4-37ITRES:E is embedded systems. In embedded systems, the sensors and logic circuits are combined with memory in order to store and process data. It is also used in many consumer electronics such as digital cameras, portable music players, video game consoles, set-top boxes and more. MT29F512G08CMCEBJ4-37ITRES:E is also used for non-volatile memory storage applications, such as bootloaders, hard disk controllers and other system memory storage.

The working principle of the MT29F512G08CMCEBJ4-37ITRES:E is based on the NAND architecture. This architecture is used in the system because it is less expensive, higher density and more energy efficient than other type of memory architectures such as NOR and EEPROM. NAND flashes memory consists of transistors and diodes connected in a cross-coupled configuration. The transistors are used to store information, while the diodes are used as selectors to determine which transistors are operating at any given time.

In addition to its normal operation, the MT29F512G08CMCEBJ4-37ITRES:E also has an ability to perform the following functions: error correction, over-provisioning of die, dynamic voltage management, data encoding, wear-leveling and power fail management. Error correction is used to detect and correct errors that occur in the memory read and write processes. Over-provisioning of die is used to increase the speed of accessing memory by storing multiple copies of the same data in different parts of the die. Dynamic voltage management allows the memory to adjust the voltage that is being supplied at any given moment. Data encoding is used to reduce data storage space, while wear-leveling helps to spread the data over several dies so it can be accessed faster. Finally, power fail management is used to ensure that data is not lost in the event of a power failure.

In conclusion, MT29F512G08CMCEBJ4-37ITRES:E is a type of NAND flashes memory that has many advantages such as high density, energy efficiency and low cost. It is used in a wide-range of applications, from consumer electronics to embedded systems. The working principle of this memory is based on the NAND architecture, which is composed of transistors and diodes connected in a cross-coupled configuration, and several additional features such as error correction, over-provisioning and data encoding are used to improve its performance.

The specific data is subject to PDF, and the above content is for reference