MT29F512G08CUCDBJ6-6ITR:D TR Allicdata Electronics
Allicdata Part #:

MT29F512G08CUCDBJ6-6ITR:DTR-ND

Manufacturer Part#:

MT29F512G08CUCDBJ6-6ITR:D TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512G PARALLEL 166MHZ
More Detail: FLASH - NAND Memory IC 512Gb (64G x 8) Parallel 16...
DataSheet: MT29F512G08CUCDBJ6-6ITR:D TR datasheetMT29F512G08CUCDBJ6-6ITR:D TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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The MT29F512G08CUCDBJ6-6ITR:D TR is a type of memory commonly known as Flash memory. It is one of the most commonly used memory devices for embedded systems and is used in consumer electronic, industrial and automotive applications. This type of memory provides high-density storage and is capable of storing large amounts of data. It is also capable of performing operations quickly, which makes it ideal for applications that require access to data in real time.

The MT29F512G08CUCDBJ6-6ITR:D TR memory device is an NAND Flash memory device which is based on a floating gate technology. This type of memory device stores data using an electrical charge in floating-gate transistors which are found on the memory cell. Every memory cell is capable of holding two bits and can be written to, read from or erased. The electrical charge is held in the cells and is used to represent the On (1) and Off (0) states.

The memory device is organized into pages and blocks. The pages are composed of groups of memory cells and each block consists of a certain number of pages. The device can have a different number of pages and blocks depending on the manufacturer and the capacity of the memory device. The memory cells can be rewritten and reprogrammed but cannot be erased from individual cells. Instead, the entire block of memory must be erased.

The memory device also has an integrated error correction code, or ECC, that is used to detect and correct errors that may have been caused by environmental factors such as temperature, radiation or other external forces. The ECC helps to ensure that data stored in the memory device is not lost or corrupted and that the device can perform reliably.

The MT29F512G08CUCDBJ6-6ITR:D TR\'s primary use is in embedded systems where its large data storage capacity and fast performance make it ideal for storing and retrieving large amounts of data quickly. In consumer electronics, it is used in many different types of products including digital cameras, cell phones, personal entertainment systems and more. In the automotive industry, it is used to store computer programs in cars and other vehicles. Many industrial applications also utilize this type of memory due to its reliable performance.

The MT29F512G08CUCDBJ6-6ITR:D TR memory device is designed to be user-friendly and easy to integrate into different systems. It is fast, reliable and efficient, and provides a reliable source of storage for applications that require large amounts of data to be stored in real time.

The specific data is subject to PDF, and the above content is for reference

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