MT29F64G08CECCBH1-12:C TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	64Gb (8G x 8)
Clock Frequency:	83MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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The MT29F64G08CECCBH1-12:C TR is a memory from a series of 3D NAND technology Flash products from Micron Technology. The state-of-the-art technology makes it suitable for a wide range of applications. This article will discuss the application fields and the working principle of the MT29F64G08CECCBH1-12:C TR.

Application Field

The MT29F64G08CECCBH1-12:C TR is one of the most popular products of the 3D NAND series and is used mainly in consumer electronics. It is mainly used in solid-state drives (SSDs). SSDs are used to store and manage data, as well as to retrieve it quickly when needed. It is also used in embedded systems such as routers, smartphones, and tablets. Thus, the MT29F64G08CECCBH1-12:C TR memory is ideal for consumer electronics applications.

The MT29F64G08CECCBH1-12:C TR memory is also used in automotive, medical, and industrial applications. In automotive applications, the memory is used for navigation systems and infotainment systems. It is also being used for data logging in medical applications. In industrial applications, the memory is used for data logging, data storage, and industrial automation.

Working Principle

The 3D NAND technology used in the MT29F64G08CECCBH1-12:C TR memory is the result of years of research and development. It is based on the planar stacking and cylindrical stacking of various layers of circuitry together so that the same amount of data can be stored on a smaller number of layers. This translates into higher storage densities with roughly the same area of silicon as traditional 2D NAND Flash memory.

The 3D NAND technology used in the MT29F64G08CECCBH1-12:C TR memory helps in reducing the fabrication process time and in lowering cost. The high yield rate of the 3D technology allows the fabs to produce more memory with fewer resources, resulting in enhanced reliability and lower power consumption. In addition, the larger blocks allow large files to be stored in a single NAND array, resulting in faster read/write times.

The 3D NAND technology used by the MT29F64G08CECCBH1-12:C TR memory also provides enhanced endurance over traditional 2D NAND Flash memory. The 3D NAND technology means that more bits can be packed into a smaller area, allowing for more data to be transferred and stored in fewer cells. This allows for higher endurance in terms of the number of writes and erases that the memory can withstand. 

The MT29F64G08CECCBH1-12:C TR memory is also highly reliable. The 3D NAND technology allows for faster programming and much higher erase-write endurance over traditional 2D NAND Flash memory. This translates into higher reliability, as the memory is able to withstand more write/erase cycles without any issues.

Conclusion

The MT29F64G08CECCBH1-12:C TR is a memory from a series of advanced 3D NAND technology Flash products from Micron Technology. The memory is ideally suited for consumer electronics, as well as automotive, industrial, and medical applications. It is highly reliable, with a high yield rate, fast programming, and high erase-write endurance. Overall, the MT29F64G08CECCBH1-12:C TR memory is an excellent choice for consumers looking for a reliable, cost-effective, and high-performance memory solution.

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