| Allicdata Part #: | MT29F8G08ADBDAH4-IT:D-ND |
| Manufacturer Part#: |
MT29F8G08ADBDAH4-IT:D |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 8G PARALLEL 63VFBGA |
| More Detail: | FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 63-... |
| DataSheet: | MT29F8G08ADBDAH4-IT:D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 8Gb (1G x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-VFBGA (9x11) |
| Base Part Number: | MT29F8G08 |
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?The MT29F8G08ADBDAH4-IT:D is a modern memory engineered by Micron Technologies, Inc. This memory is a multi-level cell NAND Flash device which is specifically designed for the mobile and consumer markets. This device utilizes a floating-gate cell structure which is capable of operating at high densities and storing more memory than comparable single-level cell devices.
The main application field of this device is consumer electronics such as mobile phones and cameras. This device is ideal for these consumer electronics as it can offer higher densities, faster speeds and greater reliability than other NAND Flash technologies. The MT29F8G08ADBDAH4-IT:D can also be used in other consumer applications such as media players, laptops and desktop computers, as well as embedded systems such as onboard computer systems.
This memory operates using a floating-gate cell structure. Each cell is made up of two transistors, a control and a floating gate transistor. The floating gate transistor stores a charge which varies based on the amount of charge present, and the control transistor helps to control the memory cell’s functionality. In NAND Flash devices, each memory cell is connected in series, so that when a logic ‘1’ or \'0\' is written to a cell, the charge stored in the floating gate is altered and the charge affects the state of the neighboring cells. This allows a data pattern to be read and written from a single NAND Flash device.
The MT29F8G08ADBDAH4-IT:D is a high-density NAND Flash device featuring 8 Gb or 1 GB of memory, with fast data read and write speeds of up to 120 MB/s. This device is programmed using the industry standard Serial Peripheral Interface (SPI), and also supports Parallel Operation, which allows data to be read faster. This device also includes features such as Error-Correcting Code, which allows the device to automatically detect and fix errors in the data being written to the memory.
The MT29F8G08ADBDAH4-IT:D is an advanced memory device which offers a variety of features and benefits. With its high storage capacity, fast speed and low power consumption, this device is ideal for consumer electronics and other applications. The up-to-date floating-gate technology makes this device reliable and easy to use, and with built-in error-checking capabilities, data can be stored and retrieved safely and securely. This device is also available in compact form factors, making it ideal for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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MT29F8G08ADBDAH4-IT:D Datasheet/PDF