MT29F8G16ABBCAH4:C

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	8Gb (512M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA (9x11)
Base Part Number:	MT29F8G16

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Memory: MT29F8G16ABBCAH4:C Application Field and Working Principle

Memory plays an important role in the operation of computer and other digital devices. One type of CPU, the MT29F8G16ABBCAH4:C, is a common type of high-density memory chip widely used in various applications. This article will provide an overview of the MT29F8G16ABBCAH4:C application field and working principle.The MT29F8G16ABBCAH4:C is a 4-gigabit (Gb) NAND Flash memory device. It is a Multi-Level Cell (MLC) device designed using cutting-edge 40 nm technology. The device is designed to interface with Multi Media Card (MMC) or Secure Digital (SD) host interface devices and provide high-capacity, high-speed data storage.The MT29F8G16ABBCAH4:C is a highly versatile memory device and is commonly used for various applications such as mobile phones, cameras, tablets, digital devices, and more. It provides high data transfer speed and a wide range of capacity options for users to choose from. The device offers a 4Gb data capacity, which can store up to 1.2 million images, approximately 36 hours of video recording, or 72 hours of audio recording.The MT29F8G16ABBCAH4:C features the latest low-power operation modes that support low-power standby operation. The device has a wide range of voltage options, from 1.8V to 2.7V. This allows the device to be used in a wide range of applications and environments. The MT29F8G16ABBCAH4:C also has an U.S.A. compliant Write Combining (WC) feature, which can combine multiple program operations into one page access to improve the data write speed and efficiency.The MT29F8G16ABBCAH4:C can support a variety of features such as high number of erase/program cycles, low data retention, improved endurance, and a wide temperature range. The device also supports security features such as a password lock, which can prevent unauthorized access to the content stored in the device.The working principle of the MT29F8G16ABBCAH4:C is based on the use of Non-Volatile Memory (NVM) cells which are able to retain data even when power is removed. The NVM cells are embedded in a series of memory blocks. Each memory block consists of a set of pages, each of which consists of a set of words. When the device receives a command from the host, it proceeds to execute the command. During the operation, the controller of the memory chip locates the target page and its address, and then transfers it to the internal RAM. The data in the memory block is then either erased or written to, depending on the command received from the host interface. After the operation is complete, the controller checks if the process was successful, and if so, it sends a status signal to the host processor. The host processor then stops the operation and provides the corresponding response.In addition, when power is applied to the device, the power-on reset signal is sent to the host processor. The host processor then performs system initialization and verifies the integrity of the data stored in the device.In conclusion, the MT29F8G16ABBCAH4:C is a high performance and low power NAND Flash memory device with a wide range of applications and features. Its cutting-edge 40 nm technology provides high-capacity storage and a wide range of voltage options. Its Non-Volatile Memory cells allow the device to retain data even when power is removed and the various commands sent by the host are executed successfully.

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