MT29RZ4B4DZZMGWD-18I.80C Allicdata Electronics
Allicdata Part #:

MT29RZ4B4DZZMGWD-18I.80C-ND

Manufacturer Part#:

MT29RZ4B4DZZMGWD-18I.80C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH RAM 4G PARALLEL 533MHZ
More Detail: FLASH - NAND, DRAM - LPDDR2 Memory IC 4Gb (128M x ...
DataSheet: MT29RZ4B4DZZMGWD-18I.80C datasheetMT29RZ4B4DZZMGWD-18I.80C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR2
Memory Size: 4Gb (128M x 32)(NAND), 4G (128M x 32)(LPDDR2)
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.8V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory: MT29RZ4B4DZZMGWD-18I.80C Application Field and Working Principle

The MT29RZ4B4DZZMGWD-18I.80C is a type of computer memory, also known as NAND flash. It belongs to a genre of non-volatile memory chips and is used in many digital devices. It is a reliable, energy-efficient and cost-effective type of memory.

The main application fields of the MT29RZ4B4DZZMGWD-18I.80C are consumer electronics, embedded systems, industrial control systems, digital cameras and automotive electronics. It is an effective and reliable choice for storing data. In addition, the memory is also a viable option for data storage in data-intensive applications, such as video and audio streaming, gaming and multimedia applications.

In terms of its working principle, the MT29RZ4B4DZZMGWD-18I.80C is built from a NAND-type flash memory cell. NAND flash memory cells are based on Flash memory chips and managed via a process referred to as the NAND flash memory architecture. In this architecture, data is stored in a series of cells, each with its own address, that can be read and written to. The NAND structure allows for fast access time and requires less power when compared to other memory types.

In order to make use of the data stored in the NAND-type memory cells, they must be connected to other electrical components, such as logic gates and address registers. In addition, various algorithms are used to perform data input, output and transmission. Finally, ECC (Error Correction Code) is employed to ensure that data remains uncorrupted even when errors occur.

The MT29RZ4B4DZZMGWD-18I.80C is a DRAM replacement, as it is much faster and more power-efficient than a typical DRAM chip. It also provides high-density storage, which makes it an attractive option for certain applications. It also has a very fast read-write speed, which makes it well-suited for data storage-intensive applications.

The MT29RZ4B4DZZMGWD-18I.80C is a well-suited type of memory for consumer electronics, embedded systems, industrial control systems, digital cameras and automotive electronics. It is an efficient, reliable and cost-effective option for data storage, and its fast read-write speed makes it well-suited for intensive data storage applications. Furthermore, its NAND-type memory architecture ensures that data remains uncorrupted even when errors occur.

The specific data is subject to PDF, and the above content is for reference

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