MT29RZ4C4DZZMGGM-18W.80U TR

Memory

Memory is an essential element of any computing device. It is the main storage for application programs and data, essentially the short-term memory of the device. Memory is typically divided into two categories: volatile and non-volatile. Volatile memory is the type of memory that loses its content when the power source is removed, while non-volatile memory retains its content even when power is removed.

The MT29RZ4C4DZZMGGM-18W.80U TR is a DRAM memory module designed for industrial applications. It consists of 4 x 512M bits (4GB) of non-volatile, low power, quad rank 4Gb DDR4 SDRAM devices in TSOP-2 and TSOP-48 packages. This module is designed to deliver high performance, reliability and excellent power efficiency in space-restricted environments. It is specifically designed for industrial and embedded applications, including embedded computing, telecommunications, medical, and automotive.

Application Field

The MT29RZ4C4DZZMGGM-18W.80U TR DRAM memory module is suitable for use in embedded systems, industrial computers, and other intensive applications. It is able to operate from 1.2V up to 1.5V, which reduces energy consumption and extends the life of the product. This module is designed for high performance, reliability, and power efficiency for a wide range of embedded and industrial applications. It can be used in a wide variety of embedded and industrial applications, such as network storage, industrial process control and automation, intelligent transportation systems, robotic control, gaming consoles, and embedded computing.

Working Principle

The MT29RZ4C4DZZMGGM-18W.80U TR memory module utilizes the properties of capacitors and transistors to store and access data. It uses a number of synchronized memory cells to store data, in which each cell consists of a transistor and a capacitor. The transistor acts as a switch, while the capacitor is where the data is stored. When data is written to the memory cell, a signal is sent to the transistor, which in turn changes the charge on the capacitor. The charge on the capacitor represents the data which is written. When data is read, the signal is sent to the transistor, which then reads the charge on the capacitor and sends the data to the processor.

The MT29RZ4C4DZZMGGM-18W.80U TR DRAM memory module is able to offer high speed and low power consumption due to its design. It also has various features, such as error correction and detection, which improves reliability and enhances system stability. It is further designed with a Refresh Command Register (RCR), which allows for dynamic refreshing of memory data for greater system reliability.

The MT29RZ4C4DZZMGGM-18W.80U TR DRAM memory module is a reliable and power efficient memory solution for embedded and industrial applications. It offers high performance, low power consumption, and excellent reliability, making it an ideal choice for a wide range of applications.