MT35XL256ABA2GSF-0AAT TR Allicdata Electronics
Allicdata Part #:

MT35XL256ABA2GSF-0AATTR-ND

Manufacturer Part#:

MT35XL256ABA2GSF-0AAT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: SPI FLASH NOR SLC 32MX8 SOIC
More Detail: Memory IC
DataSheet: MT35XL256ABA2GSF-0AAT TR datasheetMT35XL256ABA2GSF-0AAT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT35XL256ABA2GSF-0AAT is a type of memory, specifically a 3D Multi-Level Cell NAND Flash. The product is manufactured by Micron Technology, a major manufacturer of storage solutions and memory. The main features of this memory include a high storage capacity, low power consumption, and high speed.

The application fields of MT35XL256ABA2GSF-0AAT are PC systems, mobile phones, digital cameras, tablets, game consoles and other small digital products such as e-book readers. The large storage capacity of this type of memory allows for more space for data and media, making the devices more efficient. The low power consumption makes it suitable for battery-powered products. Additionally, the high speed performance of MT35XL256ABA2GSF-0AAT makes data transfer between devices much faster and more efficient.

MT35XL256ABA2GSF-0AAT follows the 3D Multi-Level Cell NAND Flash technology, which means that there are multiple layers of memory cells in the chip. This allows storage of a large amount of data while maintaining high speed and low power consumption. Each layer contains a certain number of transistors and data cells, and each cell can store 1 bit of data. This makes the memory cells more efficient, making data processing much faster.

The working principle of MT35XL256ABA2GSF-0AAT is based on the concept of NAND gates. These are reverse-connected junction transistors that are connected in a way that results in an output point when the input is given. This principle also helps in reducing power consumption, as less energy is used up when the negation of an input is done.

The MT35XL256ABA2GSF-0AAT is a type of memory that is suitable for a variety of applications thanks to its efficient storage capacity and low power consumption. Its adherence to the 3D Multi-Level Cell NAND Flash technology further improves its performance, making it an efficient way to store and process data. Additionally, its use of the NAND gates method helps improve power efficiency and makes it suitable for battery-powered applications. The combination of all these features makes it a great memory solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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