MT35XU512ABA2G12-0AAT TR

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Nowadays, Memory, as an elementary component in computers, have become indispensable parts in large-scale computing system. Among them, the MT35XU512ABA2G12-0AAT TR is a 4Gb (1Gbitx 4) 3D NAND Flash memory, which features advanced features and excellent performances, making it an ideal choice for many applications.

The MT35XU512ABA2G12-0AAT TR Memory is suitable for applications such as Automotive Systems, Solid State Drives (SSDs), USB Drives, Identification and Authentication, Mobile Devices, GPS and other applications. It has the maximum operating temperature of 105℃ and temperature grade of Tl (≤ 65℃). The MT35XU512ABA2G12-0AAT TR Memory can support the advanced interfaces such as MMC, SDIO and RS-MMC.

In terms of performance, the MT35XU512ABA2G12-0AAT TR Memory features a maximum sequential read speed of 65MB/s and a maximum sequential write speed of 55MB/s. It also supports a wide array of interfaces such as SLC, SLC-reduced, and MLC, as well as 12V on-chip power supply. Its maximum random 4K read/write speed is 2.5K/1.3K IOPS.

The MT35XU512ABA2G12-0AAT TR Memory adopts a 3D NAND Flash design that consists of two major components: the controller and the memory array. The controller is the “brain” of the memory, and it is responsible for managing the communication between the memory and the system. It also performs Error Correction Code (ECC) calculation, data encoding and other operations besides interfacing with the memory array. Meanwhile, the memory array contains various parts, such as the flash cells, and the device die, which is responsible for the organization of the entire 3D NAND Flash and provides a high-speed random access memory for the system to perform operations.

The MT35XU512ABA2G12-0AAT TR Memory is capable of meeting a wide range of requirements: it provides excellent performance, with data speeds of up to 65MB/s, and reliability with features that prevent data loss caused by power interruptions. It also features advanced interface options, such as SLC, SLC-reduced, and MLC, allowing for more flexibility in terms of system configuration. The device has superior thermal characteristics, with an operating temperature range of -40℃ to 105℃, making it suitable for automotive systems and harsh environments that require reliable performance. In addition, its advanced features, such as ECC and wear leveling, ensure that the device is capable of delivering high performance and reliability over time. Finally, its design uses a 3D NAND Flash technology to deliver high-speed data storage solutions.

In conclusion, the MT35XU512ABA2G12-0AAT TR Memory is an ideal choice for different applications. Its features, such as high performance, reliability, advanced interfaces and advanced thermal characteristics, allow it to be used in a wide range of applications. Its 3D NAND Flash technology also provides a high-speed, reliable and energy-efficient data storage solution, making it an ideal choice for many applications.

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