MT40A2G4WE-083E:B Allicdata Electronics
Allicdata Part #:

MT40A2G4WE-083E:B-ND

Manufacturer Part#:

MT40A2G4WE-083E:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 8G PARALLEL 1.2GHZ
More Detail: SDRAM - DDR4 Memory IC 8Gb (2G x 4) Parallel 1.2GH...
DataSheet: MT40A2G4WE-083E:B datasheetMT40A2G4WE-083E:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (2G x 4)
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Description

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Memory technology is defined as a component or device used to store and retrieve data. It is essential in computer systems, where it allows data to be stored and accessed in a rapid and convenient manner. It can also be used in communications and other applications where quick and efficient access to data is required.

MT40A2G4WE-083E:B is a mobile DRAM (dynamic random-access memory) that offers industry leading performance, power efficiency, and cost savings for mobile applications. It is the latest in a line of mobile DRAMs from Mobile Telecommunications Limited (MTL).

MT40A2G4WE-083E:B is designed for use in mobile applications such as smartphones and tablets, where it provides enhanced performance and power efficiency at lower cost than other DRAMs. With its low power consumption and high performance, it is ideal for use in low-power and power-sensitive devices.

MT40A2G4WE-083E:B also offers a high level of data protection, with built-in Error Correction Code (ECC) support. ECC helps protect data integrity by detecting and correcting errors that occur during data transfers. This ensures data accuracy and reliability, which are essential in mobile applications.

The MT40A2G4WE-083E:B is also designed for high speed operation, with speeds of up to 1333MHz. This makes it suitable for applications that require high performance, including gaming, streaming media, and multimedia content. It is also well suited for use in applications that require efficient multitasking, such as multitasking between multiple applications or interactive tasks.

The MT40A2G4WE-083E:B is also designed for rapid power down times, which helps increase device battery life. The use of advanced circuit technologies and timing optimization ensure that the mobile DRAM offers excellent power efficiency, helping to extend device battery life.

MT40A2G4WE-083E:B offers a number of other benefits. It is designed with a low power operating voltage, reducing power consumption. It is also designed with a unique architecture that maximizes bus utilization and data transfer rates, improving system performance and efficiency.

In addition, the MT40A2G4WE-083E:B is designed for use with a variety of memory controllers, allowing it to be used in a variety of mobile applications. This makes it a versatile solution for mobile applications. It is also compatible with multiple advanced memory technologies, allowing for increased data transfer speeds and improved system performance.

The MT40A2G4WE-083E:B is an excellent solution for mobile applications that require enhanced performance and power efficiency, as well as for use in low-power devices. It offers high performance, low power consumption, and data protection, making it an ideal choice for mobile applications. It is also compatible with a variety of memory controllers and advanced memory technologies, allowing it to be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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