Allicdata Part #: | MT40A512M8HX-083E:A-ND |
Manufacturer Part#: |
MT40A512M8HX-083E:A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 4G PARALLEL 78FBGA |
More Detail: | SDRAM - DDR4 Memory IC 4Gb (512M x 8) Parallel 1.2... |
DataSheet: | MT40A512M8HX-083E:A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR4 |
Memory Size: | 4Gb (512M x 8) |
Clock Frequency: | 1.2GHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.26 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 78-TFBGA |
Supplier Device Package: | 78-FBGA (9x11.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory
Memory is the component of a computer that stores information for quick access. It is an integral part of the way a computer functions and performs. Many different types of memory are available, each with different advantages and disadvantages for different applications and system requirements.
MT40A512M8HX-083E:A Memory
MT40A512M8HX-083E:A is a dynamic random-access memory that is widely used for high-performance server and desktop systems. It is manufactured by Micron Technology and has a capacity of 512 megabytes with 8 banks, 832 bit wide interface, 16 megabytes per chip, and clock speed of 4133 MHz.
Application Field and Working Principle of MT40A512M8HX-083E:A
One of the primary applications of MT40A512M8HX-083E:A is to provide a large amount of storage for high-performance server systems. It is also used in gaming PCs, where it can provide an excellent combination of capacity and speed. Such machines typically use a combination of MT40A512M8HX-083E:A and another type of memory, such as DDR3.
As with other types of DRAM, MT40A512M8HX-083E:A uses a dynamic structure to store data. This means that data stored in the memory must be “refreshed” on a regular basis in order for it to stay in memory. The process of refreshing the memory is referred to as “refresh DRAM” or “refresh DRAM cycle”. The refresh DRAM cycle is responsible for the rapid read and write speeds associated with MT40A512M8HX-083E:A.
The process of refreshing the memory is done by a refresh controller that sends out regular commands to “refresh” the memory cells. This takes place at regular intervals and occurs while the memory is in a Pause state. The Pause state is when no other commands are being sent and the refresh controller can take control of the memory. The refresh controller then sends out the refresh command within a specified time. This refresh command is sent out to all of the cells in the MT40A512M8HX-083E:A memory and each cell is updated with the latest data.
The refresh controller also takes care of error detection and correction. It is responsible for checking the data within the memory cells and making sure that it is accurate and up to date. If an error is found, the refresh controller will take the necessary steps to correct it. This ensures that the information stored in the memory cells is always accurate.
MT40A512M8HX-083E:A is a powerful memory that offers excellent performance in applications where high speed and large data storage are required. By utilizing its refresh DRAM cycle, it is able to read and write data faster than many other types of memory. It is also highly reliable, due to its error detection and correction capabilities. This makes it an ideal choice for high-performance server and desktop systems.
The specific data is subject to PDF, and the above content is for reference
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MT40A256M16GE-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A2G8FSE-093E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
MT40A4G4NRE-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 78FB... |
MT40A512M16HA-083E IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16HA-083E:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M8RH-062E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A1G8WE-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A512M16JY-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A1G16WBU-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 96FB... |
MT40A1G8WE-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A256M16GE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A512M16JY-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
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