
Allicdata Part #: | MT40A512M16JY-075E:B-ND |
Manufacturer Part#: |
MT40A512M16JY-075E:B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G PARALLEL 1.33GHZ |
More Detail: | SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR4 |
Memory Size: | 8Gb (512M x 16) |
Clock Frequency: | 1.33GHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.14 V ~ 1.26 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
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Memory is one of the essential components in a computer system, providing temporary storage of data and instructions. MT40A512M16JY-075E:B is a type of advanced dynamic random access memory (DRAM) module. It can be used for memory upgrades for high-end performance systems in various applications. This article will discuss the application field and working principle of this module in detail.
Application Field of MT40A512M16JY-075E:B Memory
The MT40A512M16JY-075E:B memory is designed to provide high-end performance in an array of applications. It is designed to be used in gaming PCs, workstations, professional audio and video editing, and other applications that require enhanced memory performance. It has a capacity of 512 megabytes and is made of 800-megahertz DDR3 SDRAM chips, providing efficient data transfer and fast access speeds. It also has a low latency rate which makes it suitable for high-performance applications. Additionally, the module is compatible with double data rate 4 (DDR4) technology, which increases the memory performance even further.
This type of memory offers a better value for money than most traditional DRAMs, as it is highly efficient and gives excellent speed and capacity. Additionally, it is more energy efficient than other DRAM modules, so it doesn\'t require as much power to operate. This makes it ideal for applications where energy efficiency is important, such as laptops and mobile gaming devices.
Working Principle of MT40A512M16JY-075E:B Memory
The working principle of the MT40A512M16JY-075E:B module is based on the way data is stored and accessed. It uses a technique called dynamic random-access memory (DRAM) to store information. This technique works by storing data in small capacitors, which are arranged in a grid-like structure. The capacitors act as electrical switches, and when an electrical signal is passed through them, they open or close, allowing data to be stored or retrieved.
The DRAM module uses DRAM chips to store data. Each chip is made up of several memory cells which hold around 64,000 bits of data each. The chips are arranged into memory modules which are further divided into smaller blocks. Each block is connected to the CPU by a bus which carries the data.
The MT40A512M16JY-075E:B module uses various techniques to ensure that data is read and written efficiently. For example, it uses data prefetching which helps to speed up data access by transferring the data to the CPU and memory when it is needed. It also employs error-correcting codes which detect and correct any errors that may occur when data is being accessed.
In addition, the module uses a technique known as dynamic refresh which helps to maintain the integrity of data that is stored in memory. This technique works by refreshing the memory periodically, so any data that has been corrupted or changed is overwritten with the correct version.
Conclusion
The MT40A512M16JY-075E:B memory is a type of advanced dynamic random access memory (DRAM) module which can be used for memory upgrades in various applications. It is designed to provide high-end performance with excellent speed, capacity and low latency. Additionally, it is highly energy efficient and uses various techniques to ensure reliable data access. Thus, it is an ideal solution for applications that require fast memory performance and energy efficiency.
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Part Number | Manufacturer | Price | Quantity | Description |
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MT40A1G8WE-075E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
MT40A1G8WE-083E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
MT40A1G8SA-075:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
MT40A256M16GE-075E:B | Micron Techn... | 29.55 $ | 8402 | IC DRAM 4G PARALLEL 96FBG... |
MT40A512M16JY-083E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M16JY-083E AUT:B | Micron Techn... | 95.22 $ | 500 | IC DRAM 8G PARALLEL 1.2GH... |
MT40A512M8RH-075E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M16Z01AWC1 | Micron Techn... | 0.0 $ | 1000 | DDR4 8G DIE 512MX16Memory... |
MT40A2G4WE-083E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
MT40A2G4TRF-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8SA-062E:E | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
MT40A2G4SA-075:E | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 1.33G... |
MT40A4G4NRE-075E:B | Micron Techn... | -- | 1000 | IC DRAM 16G PARALLEL 1.33... |
MT40A1G8WE-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G16HBA-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G PARALLEL 1.2G... |
MT40A1G8WE-075E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
MT40A512M8RH-062E:B | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 1.6GH... |
MT40A256M16GE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 96FBG... |
MT40A512M16HA-083E:A | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
MT40A2G4WE-075E:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
MT40A512M16JY-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 96FBG... |
MT40A512M8RH-075E AAT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A512M8RH-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
MT40A256M16GE-075E IT:B | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 1.33G... |
MT40A512M8HX-083E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A256M16GE-083E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
MT40A512M8RH-083E AAT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
MT40A2G4WE-083E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-075E AIT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A512M16LY-075:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.33G... |
MT40A512M8RH-075E AIT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.33G... |
MT40A512M16LY-062E:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 1.6GH... |
MT40A512M16HA-083E IT:A | Micron Techn... | -- | 1000 | IC DRAM 8G PARALLEL 1.2GH... |
MT40CB16T1-BP | Micro Commer... | 20.79 $ | 6 | MOD SCR/DIODE 40A 1600V T... |
MT40A1G8WE-083E IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A1G8WE-075E:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 78FBG... |
MT40A512M8HX-093E:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 78FBG... |
MT40A256M16GE-083E AUT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 1.2GH... |
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