MT44K64M18RB-107E IT:A TR

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MT44K64M18RB-107E IT:A TR Application Field and Working Principle

Memory is an important component in most digital systems. It plays an important role in computer systems and is used to store data and instructions. In this article, we will focus on MT44K64M18RB-107E IT:A TR, a type of memory module developed by Micron Technology. We will discuss the application fields of MT44K64M18RB-107E IT:A TR and its working principle.

Application Field

MT44K64M18RB-107E IT:A TR is a Double Data Rate 4 (DDR4) synchronous DRAM module. It is designed for industrial applications such as embedded systems, automotive systems, avionics, robotics and medical systems. This powerful module has a high speed of 1.6 Gb/s and features 4GX2 8-bit DDR4 SDRAM in 78 FBGA packages. It also has a voltage of 1.2 V, a frequency of 1866 MHz, and a data bus width of 64-bit.

This memory module is ideal for applications with large data processing requirements, as it can store large amounts of data, while still delivering an excellent performance. In addition, this module is energy efficient and can operate on low power, making it suitable for portable or embedded applications. Furthermore, this module is highly reliable and durable, making it resistant to harsh environmental conditions.

Working Principle

MT44K64M18RB-107E IT:A TR uses asynchronous DRAM technology to store data in a grid of cells. Each cell contains a transistor and a capacitor. When a voltage is applied to a cell, the transistor switches on, allowing the capacitor to store a charge. This charge represents the state of the cell and can be read from or written to the cell. The cells are arranged in a grid and connected to a row and column of data lines. By selectively activating and deactivating individual row and column lines, the memory can access a particular cell to read or write data.

The memory module also employs a technique known as burst reading, which allows it to read large amounts of data in a single operation. This is done by first reading a single address from the cells, and then a predetermined length of data is read from each successive memory address. This helps reduce the time required to read data from the memory module, making it faster and more efficient.

Finally, the module also uses a technique called Error Detection and Correction (EDC) to detect and correct any errors that may occur when reading or writing data. This helps ensure data accuracy and integrity, as well as prevent data loss due to incorrect operations.

In conclusion, MT44K64M18RB-107E IT:A TR is a powerful memory module designed for industrial applications. It is reliable, energy efficient and has a large data storage capacity. Moreover, this module employs techniques such as burst reading and EDC to ensure data accuracy and integrity, making it suitable for mission critical applications.

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