MT44K16M36RB-107E IT:B TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a key component of an electronic system, which stores data and instructions used by the system to perform precise tasks. The MT44K16M36RB-107E IT:B TR is a high-performance and low-power mobile DRAM that features a wide range of features and benefits for a variety of applications. Memory refers to any storage device that holds data for a computer system. This type of memory is often used for data storage and can have different speeds, sizes, and capabilities depending on its intended application.

Application Field

The MT44K16M36RB-107E IT:B TR is designed for mobile applications such as the Internet of Things (IoT), automotive infotainment systems, virtual reality (VR), and mixed reality (MR). Other application examples include high-performance mobile gaming, augmented reality (AR), augmented reality instruction systems, collaborative robots, and embedded mobile applications. The MT44K16M36RB-107E IT:B TR excels in high-throughput and low-power memory applications that require large capacity, high bandwidth, long battery life, and low power consumption.

The DRAM provides high-speed data transfer and reliable operation in a wide range of temperatures and climates. It offers exceptional 4K resolution, 25.6 Gbps data rate, and low read/write latency and refresh rate. When used in automotive infotainment systems, the MT44K16M36RB-107E IT:B TR offers high-definition audio, improved speed, better control, and improved user experience. Additionally, this type of DRAM can be used in various mobile devices such as laptops, tablets, and smartphones to provide faster performance, higher storage capacity, longer battery life, and better overall user experience.

Working Principle

The MT44K16M36RB-107E IT:B TR is designed to provide cheap and quick access to data with less power and improved thermal management. This is achieved by using a 3D DRAM architecture that arranges DRAM cells into multiple layers, increasing memory density and reducing the chip size. Each layer contains 16M cells, enabling a maximum capacity of 512M bytes. All the cells in each layer are connected in parallel and can be read and written simultaneously, increasing data transfer speed and reducing power consumption.

The DRAM is compatible with the latest memory standards, such as DDR4, LPDDR4 and LPDDR4X. It operates on a voltage range of 1.2V to 1.5V, with a frequency range of 800MHz to 3.2GHz. The low power consumption of the memory system helps increase battery life by reducing the power demands of the system. Another advantage is that this type of memory can be combined with other memory technologies such as NAND flash and SRAM to provide a combination of fast read and write speed and high data storage capacity.

The MT44K16M36RB-107E IT:B TR is an excellent low-power, high-performance mobile DRAM that offers a range of advanced features and benefits. It provides reliable, high-speed data transfer while consuming less power, making it ideal for mobile device applications. Additionally, its ability to be combined with other memory technologies makes it suitable for a variety of applications, from automotive infotainment systems to gaming and mobile devices. This type of DRAM is versatile and highly efficient, allowing users to have the best memory experience.

The specific data is subject to PDF, and the above content is for reference