MT44K64M18RCT-125E:A TR Allicdata Electronics
Allicdata Part #:

MT44K64M18RCT-125E:ATR-ND

Manufacturer Part#:

MT44K64M18RCT-125E:A TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC RLDRAM 1.125GBIT TBGA
More Detail: Memory IC
DataSheet: MT44K64M18RCT-125E:A TR datasheetMT44K64M18RCT-125E:A TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a type of physical storage medium used to store data, either temporarily or permanently. For example, computers use memory to store data that programs need to access quickly. Memory can be divided into two major categories: static and dynamic. Static memory refers to memory that is active until power is removed from the device.Dynamic memory refers to memory that must be periodically written to, like a hard drive.

MT44K64M18RCT-125E:A TR is a type of dynamic memory module and is commonly used in a broad range of applications. It is a 1.8V 8192Mb (1Gb) DDR3 DRAM module that is comprised of eight 1GB x 16 DDR3 SDRAM with a module organization of x16 and a data width of x16 bits. The module is capable of supporting CAS latency of 11 and has a maximum operating frequency of 1333MHz.

The MT44K64M18RCT-125E:A TR module is particularly suited to high-density server computing applications such as enterprise, network, cloud computing, and media streaming. It is also often used in high-capacity storage applications such as storage area networks and industrial, scientific, and medical imaging.

The workings of the MT44K64M18RCT-125E:A TR module rely heavily on its DDR3 architecture. DDR3 (Double Data Rate 3) is a type of synchronous dynamic random access memory (SDRAM) designed to facilitate high speed data transfers. DDR3 memory is designed to transfer data at double the rate of DDR2 memory. The MT44K64M18RCT-125E:A TR module makes use of its DDR3 architecture to achieve a maximum bandwidth of 20.8Gb/s.

The MT44K64M18RCT-125E:A TR module also features error-correcting code (ECC) to detect and correct single-bit errors and other errors associated with memory modules. ECC ensures the integrity of the data stored in memory by detecting and correcting errors as they occur, thus preventing system crashes and data corruption.

The MT44K64M18RCT-125E:A TR module also utilizes an array of advanced features to ensure the memory module is able to deliver the performance, reliability, and power efficiency necessary in high-density computing applications. This includes an on-die termination (ODT) circuit to mitigate signal reflections, auto self-refresh (ASR) to reduce power consumption, and on-die-repair (ODR) to extend the life of the memory module in the event of an error.

In summary, the MT44K64M18RCT-125E:A TR is a dynamic memory module designed to support a wide range of applications. Its DDR3 architecture and array of advanced features enable it to provide high speed data transfers, error correction, and efficient power consumption. As such, it is an ideal choice for high-density server computing and data storage applications.

The specific data is subject to PDF, and the above content is for reference

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