MT44K16M36RB-125E:A TR

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Memory is a key part of an electronic system, which stores information and instructions on an integrated circuit. Memory modules with high speed and low power consumption are necessary for modern deployment applications. Among them, MT44K16M36RB-125E:A TR memory module stands out as one of the superior memory products, which features a wide range of application fields and working principles.

MT44K16M36RB-125E:A TR is a Double Data Rate Static Random Access Memory (DDR SRAM) module with a 16 Megabits (Mb) bit width and a data formattable to 4, 8,16 bits. It is specifically designed for mass production applications. Compared to traditional systems, it requires less power and contributes to a better performance with its reduced chip-to-chip latency and access time. The overall performance of the memory module is improved by its 125MHz burst operation.

The device is equipped with an on-chip static control logic block containing row decode, column decode, and output buffers. This simplifies circuit design and reduces its cost. The memory module is logically two-port, but it has a single physical port for both memory read and write operations. The device has a simple command protocol that is based on SDRAM commands and can operate in the asynchronous, burst-read, and burst-write modes. It also supports multiple external chip selects and bank activation.

MT44K16M36RB-125E is optimized for use in a wide range of embedded applications. Its low power consumption and high speed make it ideal for memory application fields such as automotive, industrial, consumer devices, and embedded computers. It also operates reliably over a wide range of Temperature, meaning that it can maintain good performance even at extreme temperatures. The device is robust and meets the requirements of long-term reliability in industrial applications.

MT44K16M36RB-125E features an internal Power control circuit, which offers a power fail status output in case of sudden power failure. This makes the device suitable for power sensitive applications. The device also has an on-chip scrub feature which can help reduce errors due to memory interference.

In addition, MT44K16M36RB-125E:A TR is based on an innovative metallic oxide semiconductor (MOS) technology. This technology offers enhanced power-saving capability and high performance. The controller and memory array support high-speed operations up to 125MHz, providing cost-effective scalability and optimized performance for modern embedded applications. It employs Automatic Data Compression, which improves system performance and reduces power consumption.

MT44K16M36RB-125E:A TR is an ideal choice for many embedded systems and provides extended performance, enhanced scalability, and reliable operation in a compact package. It is suitable for applications such as automotive, computing, industrial automation, multimedia, and consumer applications.

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