MT45W1MW16BABB-706 WT TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	PSRAM
Technology:	PSRAM (Pseudo SRAM)
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-30°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	54-VFBGA
Supplier Device Package:	54-VFBGA (6x9)
Base Part Number:	MT45W1MW16

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MT45W1MW16BABB-706 WT TR application field and working principle

MT45W1MW16BABB-706 WT TR is a type of memory technology developed by the memory manufacturer Winbond. It is a 3V, 32MBit Synchronous DRAM Module based on 1M x 16 bits x 4 Banks Synchronous DRAMs and it is commonly used in smartphones and other small electronic appliances, as well as for industrial applications.This type of memory technology has a great number of advantages, such as low power consumption, large storage, high speed and low cost. It is a high density, cost-effective solution that can meet the demands of ever-growing data storage applications. The technology also provides better performance, reliability and cost-efficiency for memory intensive applications.In terms of its working principle, MT45W1MW16BABB-706 WT TR memory works by using the Synchronous DRAM technology. The Synchronous DRAM is a type of DRAM (Dynamic Random Access Memory) that takes advantage of the direct connection between the clock signal and the data signal. It is able to provide very fast data access rates and higher reliability.The data stored in an MT45W1MW16BABB-706 WT TR memory is stored as bits, which are the smallest unit of information that can be stored and retrieved in any type of computer memory. The data bits are stored in a set of 16 memory cells, each one having its own address. When an address is provided, a single data bit is retrieved from the memory by sending out the read signal.The process of writing data to the MT45W1MW16BABB-706 WT TR memory is similar to the read process. Before any data can be stored in the memory, it must first be written. The write process is initiated by sending out the write signal, followed by the data and the address. Once the data is stored in the memory it can be accessed at any time by sending out the read signal and the address.MT45W1MW16BABB-706 WT TR memory can also be used for programs and data. When a program is stored in the memory, it is divided into a series of instructions that can be executed by the computer. The instructions are stored in the memory and retrieved when they are needed by the processor. The data that is stored in the memory is usually permanent and used to store the program and read or write data for the application.One of the most important features of MT45W1MW16BABB-706 WT TR memory is its low power consumption. The memory consumes only a fraction of the power that other types of memory consumes, which makes it especially suitable for mobile devices. This technology also provides a very high speed and large capacity, which makes it suitable for a wide range of applications.The most common applications of MT45W1MW16BABB-706 WT TR memory include smartphones, industrial equipment, networking and embedded systems. It is ideal for these types of applications due to its low power consumption, high speed and large capacity. It is also used in high end products such as graphics cards, digital cameras and high-end gaming systems.Overall, MT45W1MW16BABB-706 WT TR memory is an excellent memory technology, providing high performance and reliability, along with low power consumption, large capacity and high speed. It is an ideal choice for data intensive applications, as well as for mobile devices, industrial equipment and embedded systems.

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