MT45W4MW16BBB-708 WT TR Allicdata Electronics
Allicdata Part #:

557-1009-2-ND

Manufacturer Part#:

MT45W4MW16BBB-708 WT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 64M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Paral...
DataSheet: MT45W4MW16BBB-708 WT TR datasheetMT45W4MW16BBB-708 WT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (6x9)
Base Part Number: MT45W4MW16
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT45W4MW16BBB-708 WT TR is a type of memory specifically designed for standard industrial settings. This memory device is a byte-wide Flash device that can store up to sixteen gigabits of data within a three-dimensional free-standing package. The device is made by Micron Technology, which is the leading manufacturer of advanced memory solutions.

In terms of application fields, the MT45W4MW16BBB-708 WT TR is typically used in a variety of industrial settings, including industrial automation, factory automation, medical applications, automobiles, and other embedded systems. It is a perfect solution for those who require high-speed data storage and access. Additionally, this memory device can be used in other high-density memory applications, such as solid-state drives.

The device’s working principle is also quite simple. It is basically a semiconductor device that is composed of microscopic memory cells that are arranged in rows and columns. Each cell holds a tiny bit of information, which can be programmed and read. To access or modify the contents of a cell, the memory is programmed or monitored through a standard I/O connection.

The MT45W4MW16BBB-708 WT TR is also equipped with error correction functionality, which helps to ensure the integrity of the information stored in the device. This device also has an advanced system of error detection and refill, which further help in preventing data corruption during operation.

In terms of performance, the MT45W4MW16BBB-708 WT TR exhibits consistent performance, with a typical operating temperature range of -40 to +125°C. It also has a maximum read cycle time of 0.6 us and a maximum write cycle time of 0.4 us, which are sufficient for a variety of industrial applications. Furthermore, the device has a power-down feature, which has two options: Full Flash or Deep Power Down. When the device is in the Full Flash mode, all data is read, written, and maintained; in the Deep Power Down mode, however, data is only maintained, while all other operations are disabled.

Overall, the MT45W4MW16BBB-708 WT TR is a reliable and robust memory device that is perfect for a variety of applications. Its high-speed performance and advanced error correction features make it an ideal choice for a wide range of industrial settings. Additionally, its low power consumption, high-temperature range, and power-down options make it a welcome addition to any embedded system.

The specific data is subject to PDF, and the above content is for reference

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