MT45W4MW16BBB-706 WT TR

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The MT45W4MW16BBB-706 WT TR memory module has become a mainstay in many electronic applications built for performance and speed. Such modules are more complex than those featuring single-level cells, needing multiple cores and layers to store and access data. Let\'s take a closer look at what it offers and its specific application fields.

MT45W4MW16BBB-706WT TR - Overview
The MT45W4MW16BBB-706 WT TR memory module is a 4-Gb, 4-bit depth, 4-bank double data rate (DDR) multi-level cell (MLC) NAND flash memory device. It features an on-die storage capacity, representing the latest advances in semiconductor memory technology. Consisting of four dies, each die contains four MLC dies. The four chips are arranged in two stacks of two and are connected using a ball grid array (BGA).

Application Fields
The MT45W4MW16BBB-706 WT TR module is suitable for a wide range of applications, from industrial, medical and automotive products, to consumer applications such as digital cameras, video games and smartphones. This module delivers the stability, performance and endurance offered by a DDR MLC NAND memory device, ideal for reliable operation in harsh and rapidly changing environments.Its 16-bit-wide multiplexed data bus makes it particularly well suited for embedded designs that require random reading and writing of data with sustained high speeds, as well as for applications that require intensive data accessing.

Working Principle
The MT45W4MW16BBB-706 WT TR memory module works in conjunction with NAND flash controller ICs. This module allows reading and writing data using a double data rate (DDR) protocol, during which data is read and written twice for every clock period. This is much faster than single data rate (SDR), which only reads data once for every clock period. The writing and erasing of data on the MT45W4MW16BBB-706 WT TR module is provided by a system of cells in the die arrays.In addition, the MT45W4MW16BBB-706 WT TR memory module features a fail-soft architecture as well as a battery-backup option. The fail-soft architecture ensures data integrity and page-level redundancy. This allows the module to detect and repair errors in the data before it is written to the NAND array. The battery-backup option adds to the module’s reliability by providing an uninterrupted power supply even when the primary power source is disrupted.Overall, the MT45W4MW16BBB-706 WT TR Memory Module is a high-speed NAND memory device that is suitable for a wide range of applications. Its 16-bit-wide multiplexed data bus and DDR protocol enable it to deliver reliable operation in a variety of extreme conditions, making it a popular choice for embedded designs.

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