MT45W4MW16BCGB-701 WT TR Allicdata Electronics
Allicdata Part #:

MT45W4MW16BCGB-701WTTR-ND

Manufacturer Part#:

MT45W4MW16BCGB-701 WT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 64M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Paral...
DataSheet: MT45W4MW16BCGB-701 WT TR datasheetMT45W4MW16BCGB-701 WT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (6x8)
Base Part Number: MT45W4MW16
Description

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Memory Module: MT45W4MW16BCGB-701 WT TR

The MT45W4MW16BCGB-701 WT TR memory module is the latest in today\'s memory technology, designed to provide high performance data storage and retrieval while maximizing speed, productivity and reliability.

Application Field

The MT45W4MW16BCGB-701 WT TR memory modules are used in a variety of applications, including servers, workstations, desktops, laptops, gaming systems, embedded systems and medical devices. These modules offer immense data storage capacity, with the ability to handle large volumes of data without compromising performance, reliability or scalability. With the ever-increasing demand for faster, more efficient data storage, these memory modules provide the perfect solution for a wide variety of applications.

Working Principle

The MT45W4MW16BCGB-701 WT TR memory module is based on NAND Flash memory, which is a non-volatile type of memory that can store data even after being powered off. This type of memory has the advantage of being much faster and more reliable than traditional memory technologies, and is capable of higher density data storage. NAND Flash memory is organized in clusters, which are collectively called blocks. Each block contains addressable information, and the data on each block can be accessed and manipulated independently.

The MT45W4MW16BCGB-701 WT TR memory module utilizes a special type of write operation called a Transaction Operation, which is responsible for ensuring that data is written to and retrieved from block-level areas in the same order. To guarantee that an operation is performed in the correct order, the Transaction Operation goes through a sequence of steps, including verifying the integrity of the data, checking to ensure the correct parameters (e.g. block address) are in place, and initiating the actual writing/retrieving of the data.

In addition to the Transaction Operation, the MT45W4MW16BCGB-701 WT TR memory module also utilizes Error Checking and Correction (ECC) technology. ECC is a type of error detection and correction that helps protect data from corruption due to noise or other factors. The ECC detects errors in the data and then attempts to correct them with a special algorithm.

To ensure optimal performance and reliability, the MT45W4MW16BCGB-701 WT TR memory module also utilizes an integrated Error Detection and Correction (EDC/ECC) engine. This engine runs continuously in the background, and verifies the integrity of the data, corrections errors, and ensures data integrity.

The MT45W4MW16BCGB-701 WT TR memory module is designed to provide the highest levels of reliability and performance, while remaining cost effective. With its combination of NAND Flash memory, Transaction Operation, and ECC/EDC, this module is the perfect choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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