MT45W4MW16BCGB-701 WT Allicdata Electronics
Allicdata Part #:

MT45W4MW16BCGB-701WT-ND

Manufacturer Part#:

MT45W4MW16BCGB-701 WT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 64M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Paral...
DataSheet: MT45W4MW16BCGB-701 WT datasheetMT45W4MW16BCGB-701 WT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (6x8)
Base Part Number: MT45W4MW16
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is one of the most important components in modern computing, and the MT45W4MW16BCGB-701 WT is a specialized type for a variety of applications. This memory chip is ideal for applications that require ultra-rapid access to data and reliable performance in a wide variety of conditions. In this article, we will explore the application fields of the MT45W4MW16BCGB-701 WT, as well as its working principles.

Application Fields

The MT45W4MW16BCGB-701 WT is highly capable for a variety of application fields. It is most commonly used for memory-intensive applications such as graphic processing, mission critical systems, security, high-speed servers, automotive systems, and embedded systems. It is ideal for mobile computing, with its low power consumption and high level of reliability.

The MT45W4MW16BCGB-701 WT is also frequently used in industrial applications due to its ability to operate in a wide variety of environmental conditions. Its non-volatility ensures data remains stored in the event of a power outage or other emergencies, and its high performance provides reliable performance even when subjected to conditions such as temperature fluctuations, impacts, and vibrations.

The ultra-fast access to data also makes this memory chip an ideal choice for data-intensive projects such as video streaming, satellite data transmission, and real-time analytics.

Working Principle

The MT45W4MW16BCGB-701 WT is an integrated circuit (IC) composed of several layers of transistors and capacitors on a single chip. It is a type of “dynamic random access memory” (DRAM), meaning that it requires constant power to access data. To store data, the chip stores electric charges within an array of capacitors which determine whether fetching operations can be performed without any additional power. As such, it can remain in a standby state for long periods of time without losing data.

The memory cells are organized in a “multi-die” arrangement, which connects multiple transistors together in a single structure in order to enable faster operations. This also allows for greater storage capacity and greater data transfer rates. The MT45W4MW16BCGB-701 WT is a “multi-channel” device, meaning that it is capable of retrieving data from different channels simultaneously.

Finally, the MT45W4MW16BCGB-701 WT implements error correction and detection algorithms to ensure accurate data retrieval. These algorithms are used to detect and correct minor errors, as well as to ensure that data is properly stored in the event of a power failure or other emergency.

Conclusion

The MT45W4MW16BCGB-701 WT is a specialized type of memory chip designed for a variety of applications. Its ultra-fast access to data and reliable performance, even in extreme conditions, make it an ideal choice for memory-intensive applications, mobile computing, industrial applications, and data-intensive projects. Its non-volatile nature also ensures that data remains stored in the event of power outages. Finally, its implementation of sophisticated error correction and detection algorithms ensure accurate data retrieval and maximum reliability.

The specific data is subject to PDF, and the above content is for reference

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