MT45W2MW16BABB-706 L WT Allicdata Electronics
Allicdata Part #:

MT45W2MW16BABB-706LWT-ND

Manufacturer Part#:

MT45W2MW16BABB-706 L WT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 32M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 32Mb (2M x 16) Paral...
DataSheet: MT45W2MW16BABB-706 L WT datasheetMT45W2MW16BABB-706 L WT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (6x9)
Base Part Number: MT45W2MW16
Description

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A memory is a device used to store digital information by recognizing specific patterns and produce the same results when required during its operation. MT45W2MW16BABB-706L WT is a type of memory that is usually used for mobile applications, which provides 2Gbit of non-volatile memory. This type of memory operates within an extremely wide temperature range, from -55°C to 125°C, making it an ideal choice for automotive as well as industrial applications, as well as for general embedded applications.

The memory is a SLC (Single Level Cell) NAND Flash memory and is organized with two banks of 8,192 pages (128k x 16) each. Logical organization of the memory is 1 M x 16 addressable bits and includes Data# mask and COM# latch logic support. This memory supports various commands and operations including Read, Program, Block Erase and Optional Status Read.

The operation of MT45W2MW16BABB-706L WT begins with page read. It is the main command used for data read. The page read command is sent to the device and a page of data is transferred from flash memory array to the read buffer. The read buffer contains a data array consisting of 8,192 blocks of 16 data bits for each bank. Once the data is stored in read buffer it is ready to be read by the output register.

The next operation is Program operation. This command indicates to the device to write 8,192 bytes of data into flash array. During a Program operation, the data from write buffer is transferred to the array, erased and programmed one byte at a time. Program operations are used to store important data that has to be retained for a long period of time. It will also overwrite the data that is already present in the array.

The other operation which is performed on this type of memory is Block Erase operation. Block Erase command is sent to the device and a block of 256 pages (4,096 bytes) is selected to be erased. The block is first erased and then verified. Block Erase operation is useful in cases when large chunks of data have to be erased and overwritten.

Finally, this type of memory also supports optional status read operation. The Status Read command has the function of returning data which indicates the internal status of the device. The status read operation can be used to check the status of programming operations, check for data corruption, or for checking device identification.

In summary, MT45W2MW16BABB-706L WT is a SLC NAND Flash memory that offers high speed operation and wide operating temperature range. It finds its application in mobile, automotive and industrial applications, as well as for general embedded applications. This type of memory performs read, program, block erase and status read operations to provide users with the long-term data storage and reliability.

The specific data is subject to PDF, and the above content is for reference

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