MT45W2MW16BAFB-856 WT

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MT45W2MW16BAFB-856 WT Application Field and Working Principle

MT45W2MW16BAFB-856 WT is a 1Gbit, 400MHz, 12V pseudo synchronous DRAM developed by Micron Technology. It supports both synchronous and asynchronous access modes, and is widely used in embedded systems and general-purpose memory solutions for embedded applications, such as Industrial control systems, embedded system controllers, satellite communication control, aircraft’s navigation systems and motor drive systems, etc.

Features of MT45W2MW16BAFB-856 WT

• Provides 1Gbit of ultra-fast volatile memory.
• Supporting 400MHz clock frequency.
• Supports both synchronous and asynchronous access modes.
• Auto-refresh CKE function.
• Support burst termination.
• Backward compatible DDR4 SDRAM.
• Support for temperature range operation from 0°C to +95°C.

MT45W2MW16BAFB-856 WT is a single component memory solution that provides an excellent combination of high speed and low power consumption, with a typical power consumption of 0.8W. This makes it ideal for use in embedded systems, where power consumption is often a major consideration. Additionally, MT45W2MW16BAFB-856 WT provides the unique advantage of being able to operate over a temperature range from 0°C to +95°C, which allows it to be used in even the most extreme conditions.

MT45W2MW16BAFB-856 WT Working Principle

The basic MT45W2MW16BAFB-856 WT DRAM architecture consists of a 2M bit array organized as 16,384 x 128 bit pages. The DRAM is organized in a 16-bank configuration, where each bank is capable of providing separate access to each page of memory. This architecture allows parallel access to multiple pages to improve system performance. The DRAM also features a 12-bit low load current, which reduces power consumption and improves system efficiency.

One of the most important features of the MT45W2MW16BAFB-856 WT is its ability to support both synchronous and asynchronous access modes. The synchronized access mode allows for the highest possible data throughput, while the asynchronous mode allows for slower, but more consistent access times. Additionally, the DRAM has burst termination and auto-refresh CKE functions, which help with maximizing system efficiency and reducing power consumption.

The MT45W2MW16BAFB-856 WT is a highly versatile memory solution that can be used in a wide range of embedded systems. With its combination of high speed, low power consumption, and wide temperature range operation, it provides a dependable and cost-effective memory solution for embedded applications.

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