MT45W2MW16BGB-708 AT Allicdata Electronics
Allicdata Part #:

MT45W2MW16BGB-708AT-ND

Manufacturer Part#:

MT45W2MW16BGB-708 AT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 32M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 32Mb (2M x 16) Paral...
DataSheet: MT45W2MW16BGB-708 AT datasheetMT45W2MW16BGB-708 AT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (6x8)
Base Part Number: MT45W2MW16
Description

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Memory is the fundamental storage function of computers and data processing systems. It is used to store instructions and data.MT45W2MW16BGB-708 AT is a type of memory with a wide application field and robust working principle.

MT45W2MW16BGB-708 AT is perfect for use in a variety of computing systems as an embedded memory due to its wide operating temperature range and low power consumption. It is an ideal solution for space limited applications such as handheld devices and embedded systems, as well as for use in laptops, notebooks, and other portable products. It can be utilized in an array of other applications, including networking, graphics, audio, and video systems.

The MT45W2MW16BGB-708 AT memory is a low-power and cost-efficient solution, due to its advanced built-in features. It operates in a power-saving standby mode, allows for wakeup in less than 10us and has a programmable auto refresh capability. The device’s advanced write protection capabilities make it suitable for use in rugged and portability-critical applications.

The MT45W2MW16BGB-708 AT is a double data-rate synchronous dynamic RAM (DDR SDRAM). Its architecture is based on an 8x8 array of dual data-rate organized memory cells. It has a read/write bandwidth of up to 800Mb/s, supports x16 data widths and is available in various densities ranging from 4Mbit to 16Mbit. The device also features an open-drain output for improved noise immunity.

The device\'s working principle is fairly simple. Read and write signals are sent along with the address data. The data is stored in the RAM cells until a read or write command is issued. At the same time, a control signal activates the appropriate device circuit, causing the data to be read or written.

In addition to its low power consumption and cost-efficiency, the architecture of the MT45W2MW16BGB-708 AT allows it to provide superior performance. It has an array of error correction features, a built-in counter for refreshing, a programmable mask and a programmable single error correction/double error detection (SEC/DED) code. This ensures data integrity, even while operating in the most extreme conditions.

The MT45W2MW16BGB-708 AT memory is a low-cost and low-power solution for a wide range of applications. Its wide operating temperature range and advanced features make it suitable for use in a variety of computing systems. Its robust working principle, error correction features and easy to program architecture make it an ideal solution for embedded memory applications.

The specific data is subject to PDF, and the above content is for reference

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