MT45W8MW16BGX-701 IT TR Allicdata Electronics
Allicdata Part #:

557-1444-2-ND

Manufacturer Part#:

MT45W8MW16BGX-701 IT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 128M PARALLEL 54VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 128Mb (8M x 16) Para...
DataSheet: MT45W8MW16BGX-701 IT TR datasheetMT45W8MW16BGX-701 IT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 70ns
Base Part Number: MT45W8MW16
Supplier Device Package: 54-VFBGA (8x10)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7 V ~ 1.95 V
Memory Interface: Parallel
Access Time: 70ns
Series: --
Clock Frequency: 104MHz
Memory Size: 128Mb (8M x 16)
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The MT45W8MW16BGX-701 IT TR is a high-capacity, low-power DRAM product created by Micron. It is an 8-gigabit, DDR4-based synchronous dynamic random access memory (SDRAM) device that uses an innovative Toggle 3.2 architecture. This latest architecture brings high performance, reliability, scalability, and low-voltage operation to the consumer and industrial memory markets.

The MT45W8MW16BGX-701 IT TR provides direct DRAM support for server, networking, and enterprise storage applications. This device is designed to meet industrial, server, and high-performance computing (HPC) requirements. It is also used in consumer applications, including tablets, gaming devices, and automotive infotainment.

The SDRAM technology used by the MT45W8MW16BGX-701 IT TR is based on fast, reliable, and low-power 3D stacking technology. It uses Toggle 3.2, the latest DDR4-DRAM technology, with a high-speed, low-power, low-cost interface. The Toggle 3.2 architecture is based on a three-layer, stackable chip configuration that consists of an I/O interface logic layer, a logic layer for core logic, and a DRAM layer with multiple DRAM banks.

The I/O interface layer includes the physical interface, low-voltage differential signaling (LVDS), clock logic, and memory controller. These components enable the chips to efficiently communicate with the system. The logic layer for core logic contains the control logic, and the DRAM layer is made up of the DRAM array.

The memory cells used by the MT45W8MW16BGX-701 IT TR are based on a multi-level cell (MLC) design. This design improves the overall performance and reliability of the memory while providing high density and low power consumption. In addition, the Toggle 3.2 architecture utilizes an advance write-burst, write-pretty, and write-trace techniques to maximize the performance of data transfers.

The MT45W8MW16BGX-701 IT TR also offers advanced features such as secure erase, memory protection, and self-refresh options. These features ensure that data stored in the DRAM modules is secure and reliable. The secure erase feature allows all data stored on the chips to be erased in case of unauthorized access. The memory protection feature helps to prevent unauthorized access to the memory, while the self-refresh feature helps preserve data when the DRAM module is in idle state.

The MT45W8MW16BGX-701 IT TR is an advanced SDRAM device designed to meet the needs of the industrial, server, and HPC markets. This device offers fast, reliable, and low-power memory technology for a wide range of applications. It is suitable for server, storage, and other enterprise applications as well as consumer applications such as tablets and gaming devices.

The specific data is subject to PDF, and the above content is for reference

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