MT45W4MW16PBA-70 WT Allicdata Electronics
Allicdata Part #:

MT45W4MW16PBA-70WT-ND

Manufacturer Part#:

MT45W4MW16PBA-70 WT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC PSRAM 64M PARALLEL 48VFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Paral...
DataSheet: MT45W4MW16PBA-70 WT datasheetMT45W4MW16PBA-70 WT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)
Base Part Number: MT45W4MW16
Description

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MT45W4MW16PBA-70 WT is a type of memory intended for a very specific application field. It is 90nm technology which supports DDR2M SDRAM with data transfer rate of up to 400 Mbps. MT45W4MW16PBA-70 WT has a number of features that make it suitable for various applications. For example, the device offers wide temperature range and is reliable even when used in extreme environmental conditions. Additionally, the device is capable of operating efficiently in both low voltage operation (1.5V) and high voltage operation (3.3V). These features make this device a good choice for applications such as industrial controllers and embedded systems.

The MT45W4MW16PBA-70 WT memory is composed of four channel 1Gb CMOS-based memory cells that helps in providing robust performance even in extreme conditions. The device has a simple architecture which allows for efficient communication between data and control lines. Additionally, the memory cells are organized into a two-dimensional array of memory cells in order to simplify the read and write operations. The device can operate at a data transfer rate of 400 Mbps when using a single-bit data rate, or 800 Mbps when using pulse-width modulated multiple-bit data rates.

The MT45W4MW16PBA-70 WT memory utilizes a write-back architecture allowing the device to perform write operations at a very fast speed. This architecture helps in reducing the time taken to complete a write operation and also helps to increase the overall efficiency of the memory device. Additionally, the write-back architecture helps the device to avoid unnecessary reads and writes in order to maintain low power consumption and reduce overall heat generation.

The MT45W4MW16PBA-70 WT memory device is capable of data buffering, allowing for multiple controller access in parallel to the same memory. The device also offers low latency DRAM access, helping to provide fast access to the data stored in the memory. Furthermore, the device includes an array of register address pins that allow the controller to read and write data from the memory in a straightforward manner.

The MT45W4MW16PBA-70 WT memory device is a reliable and versatile memory product ideal for a range of different application fields. It offers a wide temperature range and can operate efficiently in a number of different conditions. Additionally, the device has a simple architecture that makes data communication easy, allowing for fast and reliable data access. Furthermore, the write-back architecture helps to reduce power consumption and heat generation while also providing fast and efficient write operations. The advanced features of the device make it an ideal choice for industrial controllers and embedded systems.

The specific data is subject to PDF, and the above content is for reference

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