Allicdata Part #: | MTB23P06VT4OS-ND |
Manufacturer Part#: |
MTB23P06VT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 23A D2PAK |
More Detail: | P-Channel 60V 23A (Ta) 3W (Ta), 90W (Tc) Surface M... |
DataSheet: | MTB23P06VT4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1620pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MTB23P06VT4 is a type of single power metal oxide semiconductor field effect transistor (MOSFET). As compared to other kinds of transistors, MOSFETs have several advantages, such as low power consumption, high switching speed and extremely low input capacitance.
The MTB23P06VT4 has several features, such as a drain-source voltage of 30V, a drain current of 8A and a drain-source on resistance of 8.9m Ω. All these features combine to make this transistor an excellent choice for switching applications.
The working principle of the MTB23P06VT4 is relatively simple. It consists of two terminals connected to its gate and its source. When the voltage at the gate is increased or decreased, it produces a channel of mobile carriers (electrons) between the source and the drain. This channel enables current to flow through the device, thus allowing the load to be switched on and off.
The MTB23P06VT4 is suitable for a wide range of applications, such as switching power supplies, DC-DC converters, and motor control. It can also be used in applications that require high efficiency and low switching losses, such as computer motherboards and consumer electronics. The main advantage of this device is that it can be used for both high current and low signal switching applications.
The MTB23P06VT4 can be used to drive low voltage and high current loads, from 0.2A to 8A. It is suitable for applications that require fast switching speed, low power dissipation, and high reliability. It can also be used in high switching frequency applications, such as remote control systems. The device has a threshold voltage of 3V, which makes it suitable for low voltage applications.
In summary, the MTB23P06VT4 is a type of single power metal oxide semiconductor field effect transistor (MOSFET) with numerous features. It has a drain-source voltage of 30V, a drain current of 8A, and a drain-source on resistance of 8.9m Ω. It is suitable for a wide range of applications, such as switching power supplies, DC-DC converters, and motor control. Its main advantage is that it can be used for both high current and low signal switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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