MTB30P06VT4 Allicdata Electronics
Allicdata Part #:

MTB30P06VT4OS-ND

Manufacturer Part#:

MTB30P06VT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 60V 30A D2PAK
More Detail: P-Channel 60V 30A (Tc) 3W (Ta), 125W (Tc) Surface ...
DataSheet: MTB30P06VT4 datasheetMTB30P06VT4 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are four-terminal devices that are traditionally used to amplify and switch electric signals. MTB30P06VT4 is a very popular MOSFET in the semiconductor industry.

This MOSFET has an ultra-low RDS(on) (drain-source on-resistance) of 5mΩ, which makes it suitable for applications that require very low power consumption. This device is especially suitable for applications involving microprocessors and other digital circuits where low power consumption is essential.

Application Field

The MTB30P06VT4 is an extremely appealing MOSFET mainly due to its low RDS(on), excellent thermal stability and wide VDS operating range. It is widely used in various switching and amplification applications. This device has many applications in automotive, industrial and consumer electronics. It is especially suitable for applications such as lighting and displays, air conditioners, domestic appliances, power management and automotive assemblies.

Working Principle

The working principle of a MOSFET is based on its significant capacitance between the gate and source. By applying a voltage across the gate, an electric field is created which in turn attracts charge carriers from the source and as a result a conductive channel is formed. This leads to an increase in current flow through the device and thus the on-state threshold voltage is reached.

This generated electric field is kept constant, as long as the voltage across the gate is kept constant. In order to switch it off, the voltage across the gate is reduced, leading to the blocking of current flow. The main advantage of a MOSFET is that it can be switched on and off very quickly.

The MTB30P06VT4 has a maximum drain current of 30A. This makes it suitable for applications requiring high current switch, such as automotive and industrial applications. Furthermore, it has excellent thermal stability and thermal capabilities, which enables it to be used in a wide range of operating temperature. Additionally, the MTB30P06VT4 has excellent anti-ESD performance, making it optimal for complex designs and low-level gate drive applications.

Summary

The MTB30P06VT4 is a very popular MOSFET due to its low power consumption and wide VDS operating range. It has many applications in automotive, industrial and consumer electronics and is especially suitable for applications that require high current switch. Additionally, it has excellent thermal stability and anti-ESD performance and has been proven to be reliable in complex designs and low-level gate drive applications. Hence, it is one of the most attractive MOSFETs based on its technical features.

The specific data is subject to PDF, and the above content is for reference

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