Allicdata Part #: | MTB30P06VT4OS-ND |
Manufacturer Part#: |
MTB30P06VT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 30A D2PAK |
More Detail: | P-Channel 60V 30A (Tc) 3W (Ta), 125W (Tc) Surface ... |
DataSheet: | MTB30P06VT4 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2190pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are four-terminal devices that are traditionally used to amplify and switch electric signals. MTB30P06VT4 is a very popular MOSFET in the semiconductor industry.
This MOSFET has an ultra-low RDS(on) (drain-source on-resistance) of 5mΩ, which makes it suitable for applications that require very low power consumption. This device is especially suitable for applications involving microprocessors and other digital circuits where low power consumption is essential.
Application Field
The MTB30P06VT4 is an extremely appealing MOSFET mainly due to its low RDS(on), excellent thermal stability and wide VDS operating range. It is widely used in various switching and amplification applications. This device has many applications in automotive, industrial and consumer electronics. It is especially suitable for applications such as lighting and displays, air conditioners, domestic appliances, power management and automotive assemblies.
Working Principle
The working principle of a MOSFET is based on its significant capacitance between the gate and source. By applying a voltage across the gate, an electric field is created which in turn attracts charge carriers from the source and as a result a conductive channel is formed. This leads to an increase in current flow through the device and thus the on-state threshold voltage is reached.
This generated electric field is kept constant, as long as the voltage across the gate is kept constant. In order to switch it off, the voltage across the gate is reduced, leading to the blocking of current flow. The main advantage of a MOSFET is that it can be switched on and off very quickly.
The MTB30P06VT4 has a maximum drain current of 30A. This makes it suitable for applications requiring high current switch, such as automotive and industrial applications. Furthermore, it has excellent thermal stability and thermal capabilities, which enables it to be used in a wide range of operating temperature. Additionally, the MTB30P06VT4 has excellent anti-ESD performance, making it optimal for complex designs and low-level gate drive applications.
Summary
The MTB30P06VT4 is a very popular MOSFET due to its low power consumption and wide VDS operating range. It has many applications in automotive, industrial and consumer electronics and is especially suitable for applications that require high current switch. Additionally, it has excellent thermal stability and anti-ESD performance and has been proven to be reliable in complex designs and low-level gate drive applications. Hence, it is one of the most attractive MOSFETs based on its technical features.
The specific data is subject to PDF, and the above content is for reference
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