| Allicdata Part #: | MTB75N05HDT4OS-ND |
| Manufacturer Part#: |
MTB75N05HDT4 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 50V 75A D2PAK-3 |
| More Detail: | N-Channel 50V 75A (Tc) 2.5W (Ta), 125W (Tc) Surfac... |
| DataSheet: |  MTB75N05HDT4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The MTB75N05HDT4 is a high-performance N-channel MOSFET which is widely used in a variety of electronics applications. The MOSFET offers excellent power efficiency and minimal power losses. It is ideal for use in switching and linear applications such as power supplies, motor control systems, solar and LED lighting systems, and AC/DC converters.
The MTB75N05HDT4 is constructed of a single N-channel MOSFET. It has a breakdown voltage of 75V and a maximum drain current of 502A. The on-state resistance (RDS(on)) is 0.0018 ohm at a gate voltage of 10V.
The MTB75N05HDT4 is suitable for applications that require both high speed and a low on-state resistance. Its high current driving capability and low RDS(on) enable it to be used for high frequency switching and linear applications. The MOSFET also features a maximum junction temperature of 150°C and an operating temperature range of -55°C to 150°C.
The working principle behind the MTB75N05HDT4 is based on the ability of a transistor to act as a \'switch\'. The device has three terminals: gate, drain, and source. When a positive voltage is applied to the gate terminal, it creates an electrical field that attracts electrons towards the gate. This effectively creates a channel between the drain and source, allowing current to flow through the device. When the gate voltage is zero or negative, the channel is closed, and no current can flow through the MOSFET.
The MTB75N05HDT4 is an ideal choice for applications requiring high current switching and linear applications. Its low on-state resistance and excellent power efficiency make it an attractive option for a variety of devices, ranging from power supplies and motor controls systems to solar and LED lighting systems and AC/DC converters.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MTB75N05HDT4 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 75A D2PAK... |
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