| Allicdata Part #: | MTD10N10ELT4OSTR-ND |
| Manufacturer Part#: |
MTD10N10ELT4 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 10A DPAK |
| More Detail: | N-Channel 100V 10A (Tc) 1.75W (Ta), 40W (Tc) Surfa... |
| DataSheet: |  MTD10N10ELT4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.75W (Ta), 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1040pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 220 mOhm @ 5A, 5V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The MTD10N10ELT4 is a transistor specifically designed for high-current switching applications. The transistor is a large-signal, high-current MOSFET with a current rating of up to 10 A in a flat-pack package. The MTD10N10ELT4 is part of the MTD family of MOSFETs by STMicroelectronics.
MOSFETs are special types of field-effect transistors that operate by creating an electric field between a gate and a source terminal. The gate is responsible for controlling the channel - or the path that current flows through - between the source and drain. When a positive voltage is applied to the gate, the channel opens and current flows. When a negative voltage is applied to the gate, the channel closes and no current flows.
The MTD10N10ELT4 is designed for applications requiring a high-current rating. Its large on-state resistance can handle up to 10 A, while its low on-state voltage drop eliminates the need for a large heatsink. The device is also designed to be rugged enough to withstand vibrations and mechanical shocks.
The MTD10N10ELT4 comes in a standard flat-pack package. The package has a large surface area, providing a good amount of heat dissipation. This helps to increase the stability of the device and reduce the risk of thermal runaway. In addition, the device is leaded, which makes it easier to attach to a printed circuit board.
The MTD10N10ELT4 is ideal for applications requiring high-current switching, such as motor control, power supplies, and DC-to-DC converters. It is also suitable for applications that require a low-voltage transition and a high-current capability, such as audio amplifiers. Additionally, the device can be used in automotive applications, such as engine control and power window control.
In summary, the MTD10N10ELT4 is a large-signal, high-current MOSFET designed for high-current switching applications. The device is packaged in a standard flat-pack, which provides a large surface area and good heat dissipation. It is ideal for applications requiring high-current switching and low-voltage transition. Additionally, it is suitable for automotive applications, such as engine control and power window control.
The specific data is subject to PDF, and the above content is for reference
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