MTP3055V Allicdata Electronics
Allicdata Part #:

MTP3055VOS-ND

Manufacturer Part#:

MTP3055V

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 12A TO-220AB
More Detail: N-Channel 60V 12A (Tc) 48W (Tc) Through Hole TO-22...
DataSheet: MTP3055V datasheetMTP3055V Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 150 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The MTP3055V is a type of FET (Field Effect Transistor) which are commonly used in the electronics industry. It is one of the highest rated FETs available, with a maximum current rating of 30 Amps and a maximum Voltage rating of 55 Volts.

The MTP3055V is a single-channel, N-channel MOSFET, meaning that it allows current to flow when a voltage is applied at the gate. When no voltage is applied (or a lower voltage than the gate voltage is applied) the FET switches off, blocking the flow of current. This makes it an ideal component for power control and switching applications.

The MTP3055V has a wide range of applications, ranging from high power switch applications, such as those used in power supplies and DC-DC applications, to low power analog signal switching applications. It is also commonly used in motor control applications, as a way of limiting start-up current, protecting motors from over-current, and switching power on and off in response to feedback signals.

The working principle of the MTP3055V is basically the same as other transistors: when a voltage is applied to the gate, current flows from the source to the drain. The MTP3055V is unique, however, in its ability to handle high currents and voltages. This is due to its construction, which consists of an N-type MOSFET core, a series of P-type insulation layers and an N-type surface layer.

The N-type core is responsible for the high current and voltage ratings of the MTP3055V. When a voltage is applied to the gate, electrons are attracted to the surface of the chip and accumulate there, creating a high concentration of negative charge. This creates an electrical barrier which allows current to flow freely between the source and drain.

The P-type insulation layers, on the other hand, act as an insulator between the N-type core and the surface layer. By keeping the electrons away from the surface layer, they ensure that the voltage applied to the gate is not leaked to the surrounding electronics.

Finally, the N-type surface layer acts as an additional feedback mechanism, by controlling the amount of charge present at the gate. This makes it easier for the transistor to respond quickly to even small changes in gate voltage, allowing for fast switching times and improved reliability.

Overall, the MTP3055V is a versatile and reliable power control component, which can be used in a wide range of applications. Its high current and voltage ratings, combined with its fast switching times, make it an ideal choice for any power control or switching requirement.

The specific data is subject to PDF, and the above content is for reference

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