Allicdata Part #: | MTP50P03HDLGOS-ND |
Manufacturer Part#: |
MTP50P03HDLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 50A TO220AB |
More Detail: | P-Channel 30V 50A (Tc) 125W (Tc) Through Hole TO-2... |
DataSheet: | MTP50P03HDLG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4900pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 25A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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MTP50P03HDLG Application Field and Working Principle
The MTP50P03HDLG is an Ultra Low RDS(on) N-Channel MOSFET that is useful for low side and high side switching applications. This component is perfect for a variety of battery-oriented applications, including motor drive, battery management, and lighting control systems. This component is perfect for switching power with low loss, allowing for a high level of efficiency in mobile applications.
Features
The MTP50P03HDLG is designed to offer a wide range of features to enable efficient switching operations. The component offers:
- Low junction capacitance
- High switching speeds
- High current capability
- Low on-resistance
- Reduced losses in the system
- No body effect
Applications
The MTP50P03HDLG is ideal for applications such as motor drive, battery management, and lighting control systems. It can be used for switching power with low loss in order to achieve a high level of efficiency in mobile applications. Specifically, the component is suitable for lead acid battery management, high-side switching loads, and power supply systems.
Working Principle
The MTP50P03HDLG is an ultra low RDS(on) N-Channel MOSFET. It is designed to switch power in a loss-free way, with a high level of efficiency for mobile applications. The MOSFET works on the principle of creating a channel between the source and drain as a result of having a voltage applied to the gate. This channel enables electrons to flow from source to drain, thus creating a current flow. By changing the gate voltage, the MOSFET can be turned on and off, thus enabling the switching of power in an efficient manner.
Conclusion
The MTP50P03HDLG is an ultra low RDS(on) N-Channel MOSFET, ideal for applications such as lead acid battery management, high-side switching loads, and power supply systems. The component offers a wide range of features, such as low junction capacitance, high switching speeds, high current capability, low on-resistance, reduced losses in the system, and no body effect. The MOSFET works on the principle of creating a channel between the source and gate, enabling electrons to flow from source to drain when the gate voltage is applied. By changing the gate voltage, the MOSFET can be turned on and off, thus allowing for efficient power switching in mobile applications.
The specific data is subject to PDF, and the above content is for reference
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