MTP50P03HDLG Allicdata Electronics
Allicdata Part #:

MTP50P03HDLGOS-ND

Manufacturer Part#:

MTP50P03HDLG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 50A TO220AB
More Detail: P-Channel 30V 50A (Tc) 125W (Tc) Through Hole TO-2...
DataSheet: MTP50P03HDLG datasheetMTP50P03HDLG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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MTP50P03HDLG Application Field and Working Principle

The MTP50P03HDLG is an Ultra Low RDS(on) N-Channel MOSFET that is useful for low side and high side switching applications. This component is perfect for a variety of battery-oriented applications, including motor drive, battery management, and lighting control systems. This component is perfect for switching power with low loss, allowing for a high level of efficiency in mobile applications.

Features

The MTP50P03HDLG is designed to offer a wide range of features to enable efficient switching operations. The component offers:

  • Low junction capacitance
  • High switching speeds
  • High current capability
  • Low on-resistance
  • Reduced losses in the system
  • No body effect

Applications

The MTP50P03HDLG is ideal for applications such as motor drive, battery management, and lighting control systems. It can be used for switching power with low loss in order to achieve a high level of efficiency in mobile applications. Specifically, the component is suitable for lead acid battery management, high-side switching loads, and power supply systems.

Working Principle

The MTP50P03HDLG is an ultra low RDS(on) N-Channel MOSFET. It is designed to switch power in a loss-free way, with a high level of efficiency for mobile applications. The MOSFET works on the principle of creating a channel between the source and drain as a result of having a voltage applied to the gate. This channel enables electrons to flow from source to drain, thus creating a current flow. By changing the gate voltage, the MOSFET can be turned on and off, thus enabling the switching of power in an efficient manner.

Conclusion

The MTP50P03HDLG is an ultra low RDS(on) N-Channel MOSFET, ideal for applications such as lead acid battery management, high-side switching loads, and power supply systems. The component offers a wide range of features, such as low junction capacitance, high switching speeds, high current capability, low on-resistance, reduced losses in the system, and no body effect. The MOSFET works on the principle of creating a channel between the source and gate, enabling electrons to flow from source to drain when the gate voltage is applied. By changing the gate voltage, the MOSFET can be turned on and off, thus allowing for efficient power switching in mobile applications.

The specific data is subject to PDF, and the above content is for reference

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